Multiple germanium atom quantum dot and devices inclusive thereof

Abstract

A multiple-atom germanium quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated germanium surface, each dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.

1 . A multiple-atom germanium quantum dot comprising:
 a first plurality of dangling bonds on an otherwise H-terminated germanium lattice surface, each of said first plurality of dangling bonds having one of three ionization states of +1, 0 or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state;   said first plurality of dangling bonds being as close together as the germanium lattice allows and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of said first plurality of dangling bonds.   
     
     
         2 . The dot of  claim 1  wherein the plurality of dangling bonds is three to ten dangling bonds. 
     
     
         3 . The dot of  claim 1  wherein the plurality of dangling bonds is more than ten dangling bonds. 
     
     
         4 . The dot of  claim 1  wherein said first plurality of dangling bonds are linear. 
     
     
         5 . The dot of  claim 1  wherein said first plurality of dangling bonds are on adjacent H-terminated germanium atoms. 
     
     
         6 . The dot of  claim 1  wherein there is at least one H-terminated germanium atom intermediate between said first plurality of dangling bonds. 
     
     
         7 . The dot of  claim 1  wherein said plurality of dangling bonds form a wire with a perturbation at a first end communicated to an opposing end to the first end. 
     
     
         8 . The dot of  claim 1  further comprising an input and an output. 
     
     
         9 . The dot of  claim 8  wherein the input and an output form a gate. 
     
     
         10 . The dot of  claim 9  wherein the gate is an OR gate. 
     
     
         11 . The dot of  claim 1  further comprising a second plurality of dangling bonds on an otherwise H-terminated germanium lattice surface, each of said second plurality of dangling bonds having one of three ionization states of +1, 0, or −1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state, said second plurality of dangling bonds being as close together as the germanium lattice allows and having the dangling bond states energetically in the germanium band gap with selective control of the ionization state of one of said second plurality of dangling bonds. 
     
     
         12 . The dot of  claim 11  wherein the second plurality of dangling bonds includes 2 to 10,000 dangling bonds. 
     
     
         13 . The dot of  claim 11  wherein the second plurality of dangling bonds is positioned parallel or perpendicular to the first plurality of dangling bonds. 
     
     
         14 . The dot of  claim 11  wherein the second plurality of dangling bonds is positioned at an angle of 120° to the first plurality of dangling bonds. 
     
     
         15 . The dot of  claim 11  wherein the first plurality of dangling bonds and the second. 
     
     
         16 . The dot of  claim 11  further comprising an AFM tip as an input and a third plurality of dangling bonds, wherein the first, second, and third pluralities of dangling bonds form a Y-shape on the H-terminated germanium surface. 
     
     
         17 . The dot of  claim 16  wherein the AMF tip selectively adds or subtracts an electron or a hydrogen atom. 
     
     
         18 . The dot of  claim 11  further comprising an electrostatic bias positioned at an end of the dot to allow the dot to return to a state of equilibrium. 
     
     
         19 . The dot of  claim 11  wherein the dot is capable of performing clocking function on the order of every <10 −13  seconds. 
     
     
         20 . An electronic device comprising:
 at least one multiple-atom germanium quantum dot of  claim 1 ; and   at least contact in electronic communication with the at least one multiple-atom germanium quantum dot.