Vertical memory devices

Abstract

A vertical memory device includes gate electrodes, a channel, a first conductive through via, and insulation structures. The gate electrodes are spaced apart from each other on a substrate in a first direction substantially perpendicular to an upper surface of the substrate, and may be stacked in a staircase shape. The channel extends through the gate electrodes in the first direction. The first conductive through via extends through a conductive pad of a first gate electrode among the gate electrodes and is electrically connected thereto. The first conductive through via extends through second gate electrodes from among the gate electrodes that are under the first gate electrode. The insulation structures are formed between the first conductive through via and sidewalls of each of the second gate electrodes, and electrically insulates the first conductive through via from each of the second gate electrodes.

1 . A vertical memory device, comprising:
 gate electrodes spaced apart from each other in a first direction on a substrate, the first direction perpendicular to an upper surface of the substrate, and the gate electrodes stacked in a staircase shape;   a channel extending through the gate electrodes in the first direction;   a first conductive through via extending through a conductive pad of a first gate electrode from among the gate electrodes and electrically connected to the conductive pad, the first conductive through via extending through second gate electrodes from among the gate electrodes that are disposed under the first gate electrode; and   insulation structures between the first conductive through via and sidewalls of each of the second gate electrodes facing the first conductive through via, the insulation structures electrically insulating the first conductive through via from each of the second gate electrodes.   
     
     
         2 . The vertical memory device of  claim 1 , wherein the first conductive through via comprises:
 a vertical portion extending in the first direction; and   a protrusion portion protruding from the vertical portion in a horizontal direction parallel to the upper surface of the substrate, and   wherein the protrusion portion contacts a sidewall of the conductive pad of the first gate electrode.   
     
     
         3 . The vertical memory device of  claim 2 , wherein the first conductive through via further includes a slope portion on the vertical portion, the slope portion having a width that gradually increases from a bottom of the slope portion toward a top of the slope portion. 
     
     
         4 . The vertical memory device of  claim 2 , wherein a distance from a sidewall of the vertical portion of the first conductive through via to the sidewall of the conductive pad of the first gate electrode facing the protrusion portion of the first conductive through via is equal to or less than a distance from the sidewall of the vertical portion of the first conductive through via to the sidewalls of each of the second gate electrodes facing the first conductive through via. 
     
     
         5 . The vertical memory device of  claim 1 , wherein the insulation structures comprise:
 an insulation pattern; and   a spacer covering lower and upper surfaces of the insulation pattern.   
     
     
         6 . The vertical memory device of  claim 5 , wherein the insulation pattern comprises an oxide, and the spacer comprises a nitride. 
     
     
         7 . The vertical memory device of  claim 1 , further comprising a blocking pattern covering lower and upper surfaces of each of the gate electrodes,
 wherein the blocking pattern is not formed on a sidewall of the conductive pad of the first gate electrode facing the first conductive through via, and is formed on the sidewalls of each of the second gate electrodes facing the first conductive through via.   
     
     
         8 . (canceled) 
     
     
         9 . The vertical memory device of  claim 1 , wherein each of the gate electrodes extends in a second direction parallel to the upper surface of the substrate, and
 wherein conductive pads are respectively formed at an end portion in the second direction of each of the gate electrodes, and have a thickness in the first direction greater than that of other portions of each of the gate electrodes.   
     
     
         10 . (canceled) 
     
     
         11 . The vertical memory device of  claim 1 , further comprising:
 a lower circuit pattern;   an insulating interlayer on the substrate, the insulating interlayer covering the lower circuit pattern; and   a common source plate (CSP) on the insulating interlayer,   wherein the gate electrodes are formed on the CSP.   
     
     
         12 . The vertical memory device of  claim 11 , wherein the first conductive through via extends through the CSP and an upper portion of the insulating interlayer, and is electrically connected to the lower circuit pattern. 
     
     
         13 . The vertical memory device of  claim 12 , further comprising an insulation pattern between the first conductive through via and the CSP, the insulation pattern electrically insulating the first conductive through via from the CSP and including an oxide. 
     
     
         14 - 19 . (canceled) 
     
     
         20 . The vertical memory device of  claim 11 , further comprising a second conductive through via at a same level as the first conductive through via, the second conductive through via not extending through the CSP and the gate electrodes, and the second conductive through via extending through an upper portion of the insulating interlayer to be electrically connected to the lower circuit pattern. 
     
     
         21 . The vertical memory device of  claim 20 , further comprising a third conductive through via at the same level as the first conductive through via, the third conductive through via extending through the gate electrodes, the CSP and an upper portion of the insulating interlayer to be electrically connected to the lower circuit pattern. 
     
     
         22 . The vertical memory device of  claim 21 , wherein second insulation structures are formed between a sidewall of the third conductive through via and sidewalls of each of the gate electrodes facing the third conductive through via, the second insulation structures electrically insulating the third conductive through via from each of the gate electrodes. 
     
     
         23 . The vertical memory device of  claim 21 , further comprising silicon nitride between a sidewall of the third conductive through via and sidewalls of each of the gate electrodes facing the third conductive through via. 
     
     
         24 . (canceled) 
     
     
         25 . The vertical memory device of  claim 21 , further comprising an upper wiring on the second conductive through via and electrically connected to the second conductive through via,
 wherein no additional upper wiring is formed on each of the first and third conductive through vias, and the upper wiring configured to apply electrical signals to each of the first and third conductive through vias.   
     
     
         26 . A vertical memory device, comprising:
 gate electrodes spaced apart from each other in a first direction on first and second regions of a substrate, the substrate including the first and second regions and a third region, the first direction perpendicular to an upper surface of the substrate, and the gate electrodes having a staircase shape on the second region of the substrate;   a channel extending through the gate electrodes in the first direction on the first region of the substrate;   a first conductive through via extending through some of the gate electrodes on the second region of the substrate, the first conductive through via electrically connected to a first gate electrode at an uppermost level of the some of the gate electrodes, and the first conductive through via electrically insulated from second gate electrodes from among the some of the gate electrodes that are disposed under the first gate electrode;   a second conductive through via at a same level as the first conductive through via on the third region of the substrate; and   a third conductive through via at the same level as the first conductive through via on the first region of the substrate, the third conductive through via extending through the gate electrodes and electrically insulated from the gate electrodes,   wherein the first to third conductive through vias have a same width, and   wherein each of the first to third conductive through vias comprise a vertical portion extending in the first direction, and a slope portion having a width that gradually increases from a bottom of the slope portion toward a top of the slope portion.   
     
     
         27 . The vertical memory device of  claim 26 , further comprising an upper wiring on the second conductive through via, the upper wiring electrically connected to the second conductive through via,
 wherein no additional upper wiring is formed on each of the first and third conductive through vias, and the upper wiring is configured to apply electrical signals to each of the first and third conductive through vias.   
     
     
         28 . The vertical memory device of  claim 26 , further comprising:
 a lower circuit pattern;   an insulating interlayer on the substrate, the insulating interlayer covering the lower circuit pattern; and   a common source plate (CSP) on the insulating interlayer,   wherein the gate electrodes are formed on the CSP.   
     
     
         29 - 44 . (canceled) 
     
     
         45 . A vertical memory device, comprising:
 transistors on a substrate;   lower wirings on the substrate, the lower wirings electrically connected to the transistors;   a common source plate (CSP) on the lower wirings;   a channel connection pattern and a support layer sequentially stacked on the CSP;   gate electrodes spaced apart from each other in a first direction on the substrate, the first direction perpendicular to an upper surface of the substrate, and the gate electrodes stacked in a staircase shape on the substrate;   channels electrically connected with each other by the channel connection pattern, each of the channels extending through the gate electrodes, the support layer and the channel connection pattern in the first direction on the CSP;   a first conductive through via extending through some of the gate electrodes on the substrate, the first conductive through via electrically connected to a first gate electrode at an uppermost level of the some of the gate electrodes, and the first conductive through via electrically insulated from second gate electrodes from among the some of the gate electrodes that are disposed under the first gate electrode;   a second conductive through via at a same level as the first conductive through via, the second conductive through via not extending through the gate electrodes and the second conductive through via electrically connected to one of the lower wirings;   a third conductive through via at the same level as the first conductive through via, the third conductive through via extending through the gate electrodes, the channel connection pattern, the support layer and the CSP and electrically connected to another one of the lower wirings; and   insulation structures between the first conductive through via and sidewalls of each of the second gate electrodes that electrically insulate the first conductive through via from each of the second gate electrodes, and between the third conductive through via and sidewall of each of the gate electrodes that electrically insulate the third conductive through via from each of the gate electrodes.   
     
     
         46 - 50 . (canceled)