US2021202295A1PendingUtilityA1

Systems and methods for fixed focus ring processing

Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: Nov 28, 2017Filed: Mar 11, 2021Published: Jul 1, 2021
Est. expiryNov 28, 2037(~11.3 yrs left)· nominal 20-yr term from priority
H10P 72/7612H10P 72/7611H10P 72/7602H10P 72/3306H10P 72/3211H10P 72/3206H10P 72/0421H10P 72/72H10P 72/7606H10P 72/04C23C 14/50H01J 37/32642H01J 37/00C23C 16/45591C23C 16/4585C23C 16/4586H01L 21/68721H01L 21/67748H01L 21/68707H01L 21/67069H01L 21/67718H01L 21/6831H01L 21/67712H01L 21/68742H01L 21/68735
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Claims

Abstract

In an embodiment, a system includes: a base with a bore hole, wherein the base is configured to secure a wafer at a first position on the base; a pin extending through the bore hole; a focus ring horizontally surrounding the wafer at the first position and extending upwardly from the base, wherein the wafer is configured to be moved vertically between the first position and a second position above the focus ring via the pin; and a slit valve above the focus ring, wherein the wafer is configured to be moved horizontally between the second position and the slit valve via a robotic arm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method, comprising:
 retrieving a wafer at a position above a focus ring, wherein the focus ring extends from a base;   moving the wafer vertically through an inner annulus region, bounded by the focus ring, to rest on the base;   processing the wafer resting on the base within the focus ring; and   moving the wafer vertically through the inner annulus region of the focus ring to the position above the focus ring.   
     
     
         2 . The method of  claim 1 , comprising:
 receiving the wafer at the position above the focus ring from a robotic arm configured to move horizontally from a slit valve above the focus ring.   
     
     
         3 . The method of  claim 1 , comprising:
 securing the wafer on the base using an electrostatic chuck while processing the wafer, wherein the focus ring is immovably secured to the base.   
     
     
         4 . The method of  claim 1 , comprising:
 applying a gas to the wafer while processing the wafer.   
     
     
         5 . The method of  claim 1 , comprising:
 moving the wafer vertically via a pin within the inner annulus region, wherein the pin extends through a bore hole in the base.   
     
     
         6 . A method for moving a wafer, the method comprising:
 securing a wafer at a first position on a base, the base comprising a bore hole; and   moving a pin vertically through the bore hole to lift the wafer vertically upward from the first position to a second position;   wherein the wafer is lifted above a focus ring horizontally surrounding the wafer at the first position, wherein the focus ring comprises a horizontal annular top surface such that a total height of the focus ring is defined by a distance from a top surface of the base to the horizontal annular top surface, and wherein the second position is located above the horizontal annular top surface.   
     
     
         7 . The method of  claim 6 , further comprising moving the wafer horizontally from the second position through a slit valve located above the horizontal annular top surface of the focus ring. 
     
     
         8 . The method of  claim 7 , wherein the slit valve is configured to allow the wafer to be moved horizontally between the second position and the slit valve via a robotic arm. 
     
     
         9 . The method of  claim 8 , further comprising opening the slit valve during transport of the wafer by the robotic art to or from the second position and closing the slit valve when the wafer is in the first position. 
     
     
         10 . The method of  claim 9 , wherein the slit valve is disposed along a wall of a semiconductor wafer processing chamber above the focus ring. 
     
     
         11 . The method of  claim 6 , wherein securing the wafer in the first position comprises securing the wafer using an electrostatic chuck during semiconductor wafer processing. 
     
     
         12 . The method of  claim 11 , processing the wafer by at least one of etching and chemical vapor deposition while at the first position. 
     
     
         13 . A method for moving a wafer, the method comprising:
 securing a wafer at a first position on a base, the base comprising a bore hole;   moving a pin vertically through the bore hole to lift the wafer vertically upward from the first position to a second position;   wherein the wafer is lifted above a focus ring horizontally surrounding the wafer at the first position, wherein the focus ring comprises a horizontal annular top surface such that a total height of the focus ring is defined by a distance from a top surface of the base to the horizontal annular top surface, and surface, and wherein the second position is located above the top horizontal annular surface by 25% to 100% of the total height of the focus ring; and.   moving the wafer horizontally from the second position through a slit valve located above the horizontal annular top surface of the focus ring.   
     
     
         14 . The method of  claim 13 , wherein the slit valve is configured to allow the wafer to be moved horizontally between the second position and the slit valve via a robotic arm. 
     
     
         15 . The method of  claim 14 , further comprising engaging a bottom surface of the wafer with a wafer blade of the robotic arm. 
     
     
         16 . The method of  claim 14 , further comprising opening the slit valve during transport of the wafer by the robotic art to or from the second position and closing the slit valve when the wafer is in the first position. 
     
     
         17 . The method of  claim 16 , wherein the slit valve is disposed along a wall of a semiconductor wafer processing chamber above the focus ring. 
     
     
         18 . The method of  claim 17 , wherein securing the wafer in the first position comprises securing the wafer using an electrostatic chuck during semiconductor wafer processing. 
     
     
         19 . The method of  claim 18 , further comprising processing the wafer by at least one of etching and chemical vapor deposition while at the first position. 
     
     
         20 . The method of  claim 18 , further comprising drawing gas out of the chamber before or after the semiconductor wafer processing.

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