Vapor deposition mask, frame-equipped vapor deposition mask, vapor deposition mask preparation body, vapor deposition pattern forming method, and method for producing organic semiconductor element

Abstract

A vapor deposition mask includes: a metal mask in which a metal mask opening is provided; and a resin mask in which a resin mask opening corresponding to a pattern to be produced by vapor deposition is provided at a position overlapping with the metal mask opening, the metal mask and the resin mask being stacked, wherein an arithmetic average height (Sa) of a surface of the resin mask exposed from the metal mask opening is not more than 0.8 μm.

1 . A vapor deposition mask comprising a resin mask in which a resin mask opening corresponding to a pattern to be produced by vapor deposition is provided, wherein
 the resin mask includes a resin in which the resin mask opening can be formed by laser processing,   when a surface of the resin mask facing a vapor deposition source is a first surface, and a surface of the resin mask contacting with a vapor deposition target is a second surface,   an arithmetic average height (Sa) of the first surface of the resin mask is not more than 0.8 μm.   
     
     
         2 . The vapor deposition mask according to  claim 1 , wherein
 the first surface of the resin mask is a surface where the laser is irradiated.   
     
     
         3 . The vapor deposition mask according to  claim 1 , wherein
 an arithmetic average height (Sa) of the second surface of the resin mask is not more than 0.5 μm.   
     
     
         4 . The vapor deposition mask according to  claim 1 , wherein
 a maximum height (Sz) of the first surface of the resin mask is not more than 2.5 μm.   
     
     
         5 . The vapor deposition mask according to  claim 1 , wherein
 a maximum height (Sz) of the second surface of the resin mask is not more than 2.0 μm.   
     
     
         6 . The vapor deposition mask according to  claim 1 , wherein
 a thermal expansion coefficient of the resin mask is not more than 16 ppm/° C.   
     
     
         7 . The vapor deposition mask according to  claim 1 , wherein
 a rate of humidity absorption of the resin mask is not more than 1%.   
     
     
         8 . The vapor deposition mask according to  claim 1 , wherein
 a thickness of the resin mask is not less than 3 μm and not more than 25 μm.   
     
     
         9 . The vapor deposition mask according to  claim 1 , wherein
 a thickness of the resin mask is not less than 4 μm and not more than 8 μm.