Semiconductor device and semiconductor device manufacturing method

Abstract

The present invention aims to improve the accuracy and stability when removing an insulating film at a bottom of a TSV to allow a through hole to open toward a connection target electrode. A semiconductor device manufacturing method including: forming a through hole in a semiconductor substrate by using anisotropic etching performed from a first surface side of the semiconductor substrate; forming a thin film being an insulating film on an entire inner surface of the through hole; forming a carbon-containing thin film using plasma deposition on the first surface including an opening edge portion of the through hole; engraving an inner bottom of the through hole by using anisotropic plasma etching with the carbon-containing thin film as a mask; removing the carbon-containing thin film by ashing; and forming a through-substrate electrode in the through hole.

1 - 5 . (canceled) 
     
     
         6 . A semiconductor device comprising:
 a semiconductor substrate;   a wiring layer stacked on a first surface of the semiconductor substrate, wherein a first portion of the wiring layer comprises a metal film and a second portion of the wiring layer comprises a first insulating film, wherein the first insulating film is provided adjacent to a semiconductor substrate-side of the metal film;   a through-substrate electrode penetrating from a second surface of the semiconductor substrate;   a second insulating film interposed between the through-substrate electrode and the semiconductor substrate; and   a third insulating film adhered to an end portion of the second insulating film adjacent to the second surface of the semiconductor substrate.   
     
     
         7 . The semiconductor device of  claim 6 , wherein the first insulating film is etched. 
     
     
         8 . The semiconductor device of  claim 7 , wherein the through-substrate electrode is formed to a depth reaching a midway depth of the first insulating film. 
     
     
         9 . The semiconductor device of  claim 6 , wherein the second insulating film covers an inner surface of a through hole. 
     
     
         10 . The semiconductor device of  claim 6 , wherein the second insulating film comprises a low dielectric constant interlayer insulating film material. 
     
     
         11 . The semiconductor device of  claim 6 , wherein the third insulating film comprises one of SiO2, SiN, and SiON. 
     
     
         12 . The semiconductor device of  claim 6 , wherein the third insulating film comprises a thickness between 10 nm and 100 nm. 
     
     
         13 . A method of manufacturing a semiconductor device, the method comprising:
 forming a semiconductor substrate;   forming a wiring layer on a first surface of the semiconductor substrate, wherein a first portion of the wiring layer comprises a metal film and a second portion of the wiring layer comprises a first insulating film, wherein the first insulating film is provided adjacent to a semiconductor substrate-side of the metal film;   forming a through-substrate electrode penetrating from a second surface of the semiconductor substrate to the metal film;   forming a second insulating film interposed between the through-substrate electrode and the semiconductor substrate; and   forming a third insulating film adhered to an end portion of the second insulating film adjacent to the second surface of the semiconductor substrate.   
     
     
         14 . The method of  claim 13 , wherein the first insulating film is etched. 
     
     
         15 . The method of  claim 14 , wherein the through-substrate electrode is formed to a depth reaching a midway depth of the first insulating film. 
     
     
         16 . The method of  claim 6 , wherein the second insulating film covers an inner surface of a through hole. 
     
     
         17 . The method of  claim 13 , wherein the second insulating film comprises a low dielectric constant interlayer insulating film material. 
     
     
         18 . The method of  claim 13 , wherein the third insulating film comprises one of SiO2, SiN, and SiON. 
     
     
         19 . The method of  claim 13 , wherein the third insulating film comprises a thickness between 10 nm and 100 nm. 
     
     
         20 . An electronic device comprising:
 a semiconductor device comprising:
 a semiconductor substrate; 
 a wiring layer stacked on a first surface of the semiconductor substrate, wherein a first portion of the wiring layer comprises a metal film and a second portion of the wiring layer comprises a first insulating film, wherein the first insulating film is provided adjacent to a semiconductor substrate-side of the metal film; 
 a through-substrate electrode penetrating from a second surface of the semiconductor substrate to the metal film; 
 a second insulating film interposed between the through-substrate electrode and the semiconductor substrate; and 
 a third insulating film adhered to an end portion of the second insulating film adjacent to the second surface of the semiconductor substrate. 
   
     
     
         21 . The electronic device of  claim 20 , wherein the first insulating film is etched. 
     
     
         22 . The electronic device of  claim 21 , wherein the through-substrate electrode is formed to a depth reaching a midway depth of the first insulating film. 
     
     
         23 . The electronic device of  claim 20 , wherein the second insulating film covers an inner surface of a through hole. 
     
     
         24 . The electronic device of  claim 20 , wherein the second insulating film comprises a low dielectric constant interlayer insulating film material. 
     
     
         25 . The electronic device of  claim 20 , wherein the third insulating film comprises one of SiO2, SiN, and SiON.