Optoelectronic system

Abstract

An embodiment of the invention discloses an optoelectronic system comprising a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface; a layer covering the plurality of lateral surfaces and comprising a side surface; and a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements, wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.

What is claimed is: 
     
         1 . An optoelectronic system comprising:
 a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface;   a layer covering the plurality of lateral surfaces and comprising a side surface; and   a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements,   wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.   
     
     
         2 . The optoelectronic system of  claim 1 , wherein the layer directly contacts the plurality of lateral surfaces. 
     
     
         3 . The optoelectronic system of  claim 1 , wherein the layer exposes the first electrode. 
     
     
         4 . The optoelectronic system of  claim 1 , wherein the reflecting structure is formed in a triangular pyramid or a tetra pyramid. 
     
     
         5 . The optoelectronic system of  claim 1 , wherein the plurality of reflecting structures comprises a silicone, glass, quartz, ceramic and metallic material. 
     
     
         6 . The optoelectronic system of  claim 1 , further comprising a substrate, and the plurality of optoelectronic elements and the reflecting structures are arranged on the substrate. 
     
     
         7 . The optoelectronic system of  claim 1 , wherein the layer comprises a first portion surrounding the plurality of lateral surfaces. 
     
     
         8 . The optoelectronic system of  claim 1 , wherein the layer comprises SiO x , SiN x  or silicone. 
     
     
         9 . The optoelectronic system of  claim 7 , wherein the first portion comprises silicone. 
     
     
         10 . The optoelectronic system of  claim 1 , wherein the pyramid has a base angle ranged between 20˜70 degree. 
     
     
         11 . The optoelectronic system of  claim 6 , wherein the substrate comprises PCB. 
     
     
         12 . The optoelectronic system of  claim 1 , further comprising a submount which the optoelectronic element is bonded to.