Thermoelectric device utilizing non-zero berry curvature
Abstract
Thermoelectric devices and methods of using thermoelectric devices. A thermoelectric device includes a thermoelectric element comprised of a material having a non-zero Berry curvature. The device may operate as a Nernst generator that generates electricity in response to application of a temperature gradient to the thermoelectric element, or as an Ettingshausen cooler that pumps heat into or out of an object to be heated or cooled in response to application of a current to the thermoelectric element. In either application, the non-zero Berry curvature of the material allows the device to operate without an externally applied magnetic field.
Claims
exact text as granted — not AI-modified1 - 20 . (canceled)
21 . A method of generating electricity comprising:
providing a temperature gradient across a first dimension of a thermoelectric element including a material having a non-zero Berry curvature along the first dimension; generating a voltage gradient along a second dimension of the thermoelectric element aligned with a cross-product of the temperature gradient and the non-zero Berry curvature; and coupling a voltage provided by the voltage gradient to an electrical load.
22 . The method of claim 21 wherein providing the temperature gradient across the first dimension of the thermoelectric element comprises:
coupling a first side of the thermoelectric element to a heat source; and
coupling a second side of the thermoelectric element to a heat sink, the second side located a first distance from the first side along a third dimension transverse to both the first dimension and second dimension.
23 . The method of claim 22 further comprising:
applying a magnetic field aligned with the non-zero Berry curvature to the thermoelectric element.
24 . The method of claim 21 wherein the material is a Weyl semimetal.
25 . The method of claim 21 wherein the temperature gradient is orthogonal to the non-zero Berry curvature.
26 . A method of pumping heat into or out of a thermal load, comprising:
passing a current through a thermoelectric element including a material having a non-zero Berry curvature along a first dimension such that the current flows across the first dimension; generating a temperature gradient along a second dimension of the thermoelectric element aligned with a cross-product of the current and the non-zero Berry curvature; and coupling the temperature gradient to the thermal load.
27 . The method of claim 26 wherein coupling the temperature gradient to the thermal load comprises:
coupling a first side of the thermoelectric element to a heat sink; and
coupling a second side of the thermoelectric element to an object to be cooled or warmed, the second side located a first distance from the first side along the second dimension.
28 . The method of claim 27 wherein passing the current through the thermoelectric element in a first direction cools the object, and passing the current in a second direction opposite the first direction warms the object.
29 . The method of claim 26 further comprising:
applying a magnetic field aligned with the non-zero Berry curvature to the thermoelectric element.
30 . The method of claim 26 wherein the material is a Weyl semimetal.
31 . The method of claim 26 wherein the non-zero Berry curvature is orthogonal to both the temperature gradient and the current.
32 . A thermoelectric device comprising:
a thermoelectric element including a material having a non-zero Berry curvature along a first dimension of the thermoelectric element; a first thermal coupler thermally coupled to a first side of the thermoelectric element; a second thermal coupler thermally coupled to a second side of the thermoelectric element, the second side located a first distance from the first side along a second dimension transverse to the first dimension; a first terminal electrically coupled to a third side of the thermoelectric element; and a second terminal electrically coupled a fourth side of the thermoelectric element, the fourth side located a second distance from the third side along a third dimension aligned with a cross-product of the second dimension and the non-zero Berry curvature.
33 . The thermoelectric device of claim 32 wherein the thermoelectric element generates a voltage across the first and second terminals in response to an application of a temperature gradient across the first and second thermal couplers.
34 . The thermoelectric device of claim 32 wherein the thermoelectric element generates a temperature gradient across the first and second thermal couplers in response to an application of an electrical current through the first and second terminals.
35 . The thermoelectric device of claim 32 wherein the non-zero Berry curvature is orthogonal to a temperature gradient to which the thermoelectric element is exposed or the thermoelectric element generates.
36 . The thermoelectric device of claim 32 wherein:
the first thermal coupler is configured to thermally couple the first side to a heat source; and
the second thermal coupler is configured to thermally couple the second side to a heat sink,
wherein a voltage is generated between the third and fourth sides in response to application of a temperature gradient between the first thermal coupler and the second thermal coupler.
37 . The thermoelectric device of claim 32 further comprising:
a magnet configured to provide a magnetic field aligned with the non-zero Berry curvature to the thermoelectric element.
38 . The thermoelectric device of claim 32 wherein the material is a Weyl semimetal.
39 . The thermoelectric device of claim 38 wherein the Weyl semimetal breaks time-reversal symmetry.Join the waitlist — get patent alerts
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