Copper alloy for electrical and electronic parts and semiconductors with high strength and high electrical conductivity and method of preparing the same

Abstract

Disclosed are a copper alloy for electrical and electronic parts and semiconductors having high strength and high electrical conductivity and a method of preparing the same. The copper alloy includes 0.09 to 0.20% by mass of iron (Fe), 0.05 to 0.09% by mass of phosphorous (P), 0.05 to 0.20% by mass of manganese (Mn), the remaining amount of copper (Cu) and 0.05% by mass or less of inevitable impurities, and has tensile strength of 470 MPa or more, hardness of 145 Hv or more, electrical conductivity of 75% IACS or more and a softening resistant temperature of 400° C. or higher.

1 : A copper alloy for electrical and electronic parts and semiconductors, comprising:
 0.09 to 0.20% by mass of iron (Fe) 0.05 to 0.09% by mass of p hosphorous (P), 0.05 to 0.20% by mass of manganese (Mn), the remaining amount of copper (Cu) and 0.05% by mass or less of inevitable impurities, the inevitable impurities comprising at least one selected from the group consisting of Si, Zn, Ca, Al, Ti, Be, Cr, Co, Ag and Zr; and   (FeMn) 2 P precipitates, wherein:   the (FeMn) 2 P precipitates are measured by observing a specimen prepared by a carbon extraction replica method using a high-resolution transmission electron microscope (HR-TEM) or a field emission transmission electron microscope (FE-TEM) at a magnification of 100,000× or more, and have an average particle size of 50 nm or less and an area density of 1.0*10 10 /cm 2  or more; and   the copper alloy has tensile strength of 470 MP or ore, hardness of 145 Hv or more, electrical conductivity of 75% IACS or more and a softening resistant temperature of 400° C. or higher.   
     
     
         2 : The copper alloy for electrical and electronic parts and semiconductors according to  claim 1 , wherein the impurities have a content of 0.01% by mass or less. 
     
     
         3 : The copper alloy for electrical and electronic parts and semiconductors according to  claim 1 , further comprising 0.0001 to 0.03 % by mass of at least one of Ni or Sn. 
     
     
         4 : The copper alloy for electrical and electronic parts and semiconductors according to  claim 1 , wherein the copper alloy has an average crystal grain size of 20 μm or less and a standard deviation of 5 μm or less, out of crystal grain sizes measured by crystal orientation analysis using a field emission scanning electron microscope (FE-SEM). 
     
     
         5 : The copper alloy for electrical and electronic parts and semiconductors according to  claim 1 , wherein the copper alloy is prepared as a sheet or a panel. 
     
     
         6 : A method of preparing a copper alloy for electrical and electronic parts and semiconductors, comprising:
 melting the component elements of the copper alloy to cast an ingot, wherein the component elements comprise:   0.09 to 0.20% by mass of iron (Fe), 0.05 to 0.09% by mass of phosphorous (P), 0.05 to 0.20% by mass of manganese (Mn), the remaining amount of cooper (Cu) and 0.05% by mass or less of inevitable impurities, the inevitable impurities comprising at least one selected from the group consisting of Si, Zn, Ca, Al, Ti. Be, Cr, Co, Ag and Zr; and   (FeMn) 2 P precipitates, wherein:   the (FeMn) 2 P precipitates are measured b observing a specimen prepared by a carbon extraction replica method using a high-resolution transmission electron microscope (HR-TEM) or a field emission transmission electron microscope (FE-TEM) at a magnification of 100,000× or more, and have an average particle size of 50 nm or less and an area density of 1.0*10 10 /cm 2  or more; and   the copper alloy has tensile strength of 470 MPa or more, hardness of 145 Hv or more, electrical conductivity of 75% IACS or more and a softening resistant temperature of 400° C. or higher;   homogenization heat treating the acquired ingot at a temperature of 900-1,000° C. for 1-4 hours, and then hot rolling at a working ratio of 85-95%;   cold rolling the obtained product from the previous step at working ratio of 87-98%;   precipitation heat treating the obtained product from he previous step at a temperature of 430-520° C. for 1-10 hours; and   rolling the obtained product from the previous step at a reduction ratio of 10-90% to produce a finished product.   
     
     
         7 : The method according to  claim 6 , wherein impurities have a content of 0.01 by mass or less.. 
     
     
         8 : The method according to  claim 6 , wherein the copper alloy comprises 0.0001 to 0.03% by mass of at least one of Ni or Sn. 
     
     
         9 : The method according to  claim 6 , wherein the copper alloy has an average crystal grain size of 20 μm or less and a standard deviation of 5 μm or less, out of crystal grain sizes measured by crystal orientation analysis using a field emission scanning electron microscope (FE-SEM). 
     
     
         10 : The method according to  claim 6 , wherein the copper alloy is prepared as a sheet or a panel. 
     
     
         11 : A method of preparing a copper alloy for electrical and electronic parts and semiconductors, comprising:
 melting component elements of the copper alloy to cast an ingot, wherein the component elements comprise:   0.09 to 0.20% by mass of iron (Fe), 0.05 to 0.09% by mass of phosphorous (P), 0.05 to 0.20% by mass of manganese (Mn), the remaining amount of copper (Cu) and 0.05% by mass or less of inevitable impurities, the inevitable impurities comprising at least one selected from the group consisting of Si, Zn, Ca, Al, Ti Be, Cr, Co, Ag and Zr, wherein the impurities have a content of 0.01% by mass or less; and   (FeMn) 2 P precipitates, wherein:   the (FeMn) 2 P precipitates are measured by observing a specimen prepared by a carbon extraction replica method using a high-resolution transmission electron microscope (HR-TEM) or a field emission transmission electron microscope (FE-TEM) at a magnification of 100,000× or more, and have an average particle size of 50 nm or less and an area density of 1.0*10 10 /cm 2  or more; end   the copper alloy has tensile strength of 470 MPa or more, hardness of 145 Hv or more, electrical conductivity of 75% IACS or more and a softening resistant temperature of 400° C. or higher;   homogenization heat treating the acquired ingot at a temperature of 900-1,000° C. for 1-4 hours, and then hot rolling at a working ratio of 85-95%;   cold rolling the obtained product from the previous step at a working ratio of 87-98%;   precipitation heat treating the obtained product from the previous step at a temperature of 430-520° C. for 1-10 hours; and   rolling the obtained product from the, previous step at a reduction, ratio of 10-90% to produce a finished product.   
     
     
         12 : The method according to  claim 11 , wherein the copper alloy comprises 0.0001 to 0.03% by mass of at least one of Ni or Sn. 
     
     
         13 : The method according to  claim 11 , wherein the copper alloy has an average crystal grain size of 20 μm or less and a standard deviation of 5 μm or less, out of crystal grain sizes measured by crystal orientation analysis using a field emission scanning electron microscope (FE-SEM). 
     
     
         14 : The method according to  claim 11 , wherein the copper alloy is prepared as sheet or a panel.