Trichlorodisilane

Abstract

The present disclosure includes a composition for forming a silicon-containing film on a substrate, comprising: a silicon precursor and a nitrogen precursor. The silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. The substrate is a semiconductor material. The silicon precursor comprises trichlorodisilane. The trichlorodisilane is 1,1,1-trichlorodisilane.

What is claimed is: 
     
         1 . A composition for forming a silicon-containing film on a substrate, comprising:
 a silicon precursor comprising trichlorodisilane and a nitrogen precursor.   
     
     
         2 . The composition of  claim 1 , wherein the silicon-containing film is an elemental silicon film, a silicon carbon film, a silicon nitrogen film, or a silicon oxygen film. 
     
     
         3 . The composition of  claim 1 , wherein the silicon-containing film has a wet etch rate that is less than the wet etch rate for a silicon-containing film deposited from hexachlorodisilane. 
     
     
         4 . The composition of  claim 1 , wherein said composition obtained by a process comprising:
 subjecting a first vapor of the silicon precursor and a second vapor comprising helium or hydrogen to deposition conditions in the presence of the substrate so as to form the silicon-containing film on the substrate,   wherein the silicon-containing film is an elemental silicon film.   
     
     
         5 . The composition of  claim 1 , wherein said composition obtained by a process comprising:
 subjecting a first vapor of the silicon precursor and a second vapor of a carbon precursor comprising a hydrocarbon, hydrocarbylsilane or a combination of a hydrocarbon, hydrocarbylsilane to deposition conditions in the presence of the substrate so as to form the silicon-containing film on the substrate,   wherein the silicon-containing film is a silicon carbon film.   
     
     
         6 . The composition of  claim 1 , wherein said composition obtained by a process comprising:
 subjecting a first vapor of the silicon precursor and a second vapor of a nitrogen precursor comprising molecular nitrogen, ammonia, amine, hydrazine, or a combination of any two or three thereof to deposition conditions in the presence of the substrate so as to form a silicon-containing film on the substrate,   wherein the silicon-containing film is a silicon nitrogen film.   
     
     
         7 . The composition of  claim 1 , wherein said composition obtained by a process comprising:
 subjecting a first vapor of the silicon precursor and a second vapor of an oxygen precursor comprising molecular oxygen, ozone, nitric oxide, nitrogen dioxide, water, hydrogen peroxide, or a combination of any two or three thereof to deposition conditions in the presence of the substrate so as to form the silicon-containing film on the substrate,   wherein the silicon-containing film is a silicon oxygen film.   
     
     
         8 . The composition of  claim 3 , wherein:
 said substrate obtained by being heated and disposed in a deposition reactor that is configured for atomic layer deposition;   said composition obtained by a process comprising:
 repeatedly feeding the first vapor of a silicon precursor comprising trichlorodisilane, 
 purging with an inert gas, 
 feeding the second vapor into the deposition reactor, and 
 purging with an inert gas so as to form the silicon-containing film on the heated substrate using an atomic layer deposition; 
   wherein the atomic layer deposition comprises a plasma enhanced atomic layer deposition or a thermal atomic layer deposition; and   wherein feeds may be the same or different.   
     
     
         9 . The composition of  claim 3 , wherein the atomic layer deposition is a plasma enhanced atomic layer deposition and wherein the plasma is ammonia plasma in nitrogen or argon, forming gas plasma, nitrogen plasma, or oxygen plasma. 
     
     
         10 . The composition of  claim 3 , wherein said substrate obtained by being heated and disposed in a deposition reactor that is configured for chemical vapor deposition,
 wherein said composition obtained by a process comprising: feeding the first vapor of a silicon precursor and feeding the second vapor into the deposition reactor so as to form the silicon-containing film on the heated substrate using chemical vapor deposition,   wherein feeds may be the same or different.   
     
     
         11 . The composition of  claim 6 , wherein the first and second vapor lack carbon and oxygen and the silicon nitrogen film comprises a silicon nitride film. 
     
     
         12 . The composition of  claim 1 , wherein the substrate is a semiconductor material. 
     
     
         13 . The composition of  claim 1 , wherein the trichlorodisilane is 1,1,1-trichlorodisilane.