Wavelength conversion device, manufacturing method thereof, and related illumination device

Abstract

A wavelength conversion device, a manufacturing method thereof, and a related illumination device. The wavelength conversion device comprises a fluorescent powder layer (110) that is successively stacked, a diffuse reflection layer (120), and a high-thermal-conductivity substrate (130). The diffuse reflection layer (120) comprises white scattered particles for scattering the incident light; the high-thermal-conductivity substrate (130) is one of an aluminum nitride substrate, a silicon nitride substrate, a silicon carbide substrate, a boron nitride substrate, and a beryllium oxide substrate. The wavelength conversion device has good reflectivity and thermal stability.

1 .- 6 . (canceled) 
     
     
         7 . A manufacturing method for a wavelength conversion device, comprising:
 A. obtaining a high thermal conductivity substrate, which is selected from: an aluminum nitride substrate, a silicon nitride substrate, a silicon carbide substrate, a boron nitride substrate, and a beryllium oxide substrate;   B. obtaining a diffuse reflection layer, which includes white scattering particles for scattering an incident light;   C. obtaining a phosphor layer, which includes a phosphor powder; and   D. sequentially stacking the phosphor layer, the diffuse reflection layer and the high thermal conductivity substrate and affixing them to each other.   
     
     
         8 . The manufacturing method of  claim 7 , wherein step B and step D include:
 sintering the diffuse reflection layer on a surface of the high thermal conductivity substrate, wherein the diffuse reflection layer includes white scattering particles and a first glass powder, wherein a sintering temperature is lower than a melting point of the high thermal conductivity substrate, and affixing the phosphor layer on a surface of the diffuse reflection layer on the surface of the substrate.   
     
     
         9 . The manufacturing method of  claim 7 , wherein step B, step C and step D include:
 sintering the diffuse reflection layer on a surface of the high thermal conductivity substrate, wherein the diffuse reflection layer includes the white scattering particles and a first glass powder, wherein a sintering temperature is lower than a melting point of the high thermal conductivity substrate, and sintering the phosphor layer on a surface of the diffuse reflection layer on the surface of the substrate, wherein the phosphor layer includes a second glass powder and the phosphor powder, and wherein a sintering temperature is T 3 ≤Tf+400° C., where Tf is a softening point of the first glass powder.   
     
     
         10 . The manufacturing method of  claim 8 , wherein the step of sintering the diffuse reflection layer on the surface of the high thermal conductivity substrate includes:
 B1. obtaining the white scattering particles, the first glass powder, and an organic carrier;   B2. mixing the white scattering particles, the first glass powder, and the organic carrier to obtain a slurry of the scattering particles;   B3. coating the slurry of the scattering particles over the high thermal conductivity substrate; and   B4. sintering the high thermal conductivity substrate which has been coated with the slurry of the scattering particles to obtain the diffuse reflection layer.   
     
     
         11 . The manufacturing method of  claim 9 , wherein the step of sintering the phosphor layer on the surface of the diffuse reflection layer on the surface of the substrate includes:
 C1. obtaining the second glass powder, the phosphor powder, and an organic carrier;   C2. mixing the second glass powder, the phosphor powder, and the organic carrier to obtain a slurry of the phosphor powder;   C3. coating the slurry of the phosphor powder over the surface of diffuse reflection layer of the high thermal conductivity substrate; and   C4. sintering the high thermal conductivity substrate which has been coated with the slurry of the phosphor powder to obtain the phosphor layer, wherein a sintering temperature is T 3 ≤Tf+400° C., where Tf is a softening point of the first glass powder.   
     
     
         12 . The manufacturing method of  claim 10 , further comprising, between step B3 and step B4: heating the high thermal conductivity substrate which has been coated with the slurry of the scattering particles at a temperature T 1  for over 0.2 hours, wherein Tb−100° C.≤T 1 ≤Tb+200° C., where Tb is a complete break down temperature of the organic carrier. 
     
     
         13 . (canceled)