Semiconductor light emitting device and manufacturing method

Abstract

The present invention provides a semiconductor light emitting device including a substrate, a first semiconductor layer, a first cladding layer, an active layer, a second cladding layer and a second semiconductor layer, and a manufacturing method. The first semiconductor layer may be an n-type semiconductor including a III-V semiconductor or a II-VI semiconductor. The second semiconductor layer may be a p-type semiconductor including a I-VII semiconductor. The semiconductor light emitting device may further include a third cladding layer between the active layer and the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor. Therefore, by providing the hybrid type semiconductor light emitting device and the manufacturing method thereof, the luminous efficiency limit of the p-type semiconductor can be overcome.

1 . A method of manufacturing a semiconductor light emitting device, the method comprising:
 preparing a substrate;   forming an n-type semiconductor on the substrate, the n-type semiconductor including a III-V semiconductor or a II-VI semiconductor material;   forming a first cladding layer on the n-type semiconductor, the first cladding layer including a III-V semiconductor or a II-VI semiconductor material;   forming an active layer on the first cladding layer, the active layer including a III-V semiconductor or a II-VI semiconductor material;   forming a second cladding layer on the active layer, the second cladding layer including an I-VII semiconductor; and   forming a p-type semiconductor on the second cladding layer, the p-type semiconductor including an I-VII semiconductor.   
     
     
         2 . The method of manufacturing a semiconductor light emitting device of  claim 1 , further comprising:
 forming a third cladding layer between forming the active layer and the forming the second cladding layer, the third cladding layer including a III-V semiconductor or a II-VI semiconductor material.   
     
     
         3 . The method of manufacturing a semiconductor light emitting device of  claim 1 , wherein the I-VII semiconductor is any one of CuCl, CuBr, CuI and AgI, or a combination of two or more thereof. 
     
     
         4 . The method of manufacturing a semiconductor light emitting device of  claim 1 , wherein the III-V semiconductor is any one of GaN, GaP, GaAs, InP, AlGaN, AlGaP, AlInGaN, InGaAs and GaAsP or a combination of two or more thereof. 
     
     
         5 . The method of manufacturing a semiconductor light emitting device of claim  1 , wherein the II-VI semiconductor is any one of CdO, CdS, CdSe, CdTe, ZnO, ZnS, ZnSe, ZnTe, CdZnTe, HgCdTe and HgZnTe or a combination of two or more thereof.