Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

1 . A monolithically integrated multi-sensor (MIMs) comprising:
 an infrared sensor configured to measure a parameter; and   a first micro-electromechanical system (MEMs) sensor configured to measure a first parameter; and
 a second MEMs sensor configured to measure a second parameter wherein the first parameter, the second parameter and the parameter measured by the infrared sensor are different, wherein the infrared sensor, the first MEMs sensor, and the second MEMs sensor are formed at the same time on or in a single semiconductor substrate, and wherein one or more layers of a monolithic semiconductor process that forms the MIMs is configured to form a cap that seals one of the infrared sensor, the first MEMS sensor, or the second MEMs sensor from an external environment. 
   
     
     
         2 . The MIMS of  claim 1  wherein the MIMs is operatively coupled to a wearable device and wherein the single semiconductor substrate of the MIMs is silicon. 
     
     
         3 . The MIMS of  claim 1  wherein at least one layer of the MIMs is shared in common with the infrared sensor, the first MEMs sensor, or the second MEMs sensor and wherein at least a portion of the at least one layer shared in common with the infrared sensor, the first MEMs sensor, or the second MEMs sensor is etched on or in the single semiconductor substrate. 
     
     
         4 . The MIMS of  claim 1  wherein the one or more layers of the monolithic semiconductor process that forms the MIMs is configured to form caps that seals two of the infrared sensor, the first MEMs sensor or the second MEMs sensor. 
     
     
         5 . The MIMS of  claim 1  wherein at least one layer of the monolithic semiconductor process that forms the MIMs is configured to flex in at least one of the infrared sensor, the first MEMs sensor, or the second MEMs sensor and wherein the at least one layer of the monolithic semiconductor process that forms the MIMs that is configured to flex in at least one of the infrared sensor, the first MEMs sensor, or the second MEMs sensor is configured not to flex in at least one of the infrared sensor, the first MEMs sensor, or the second MEMs sensor. 
     
     
         6 . The MIMS of  claim 1  wherein the first or the second MEMs sensors is sealed from an external environment at a different pressure than the external environment. 
     
     
         7 . The MIMS of  claim 1  further including three or more MEMs sensors formed on or in the single semiconductor substrate wherein each of the three or more MEMs sensors measure different parameters. 
     
     
         8 . The MIMs of  claim 1  wherein the MIMs includes at least one of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, an IR sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor. 
     
     
         9 . The MIMS of  claim 1  wherein at least one sensor of the infrared sensor, the first MEMs sensor, or the second MEMs sensor is sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating. 
     
     
         10 . A monolithically integrated multi-sensor (MIMs) comprising:
 an integrated circuit comprising:
 an infrared sensor configured to measure a parameter; and 
 two or more micro-electromechanical system (MEMs) sensors wherein the infrared sensor and the two or more MEMs sensors are configured to measure different parameters, wherein the infrared sensor and the two or more MEMs sensors are formed at the same time on or in a single semiconductor substrate, and wherein one or more layers of a monolithic semiconductor process that forms the MIMs is configured to seal more than one of the infrared sensor or the two or more MEMs sensors from an external environment. 
   
     
     
         11 . The MIMS of  claim 10  wherein the integrated circuit is operatively coupled to a wearable device and wherein the single semiconductor substrate is silicon. 
     
     
         12 . The MIMS of  claim 10  wherein the integrated circuit has three or more MEMs sensors and wherein each of the three or more MEMs sensors measures a different parameter. 
     
     
         13 . The MIMS of  claim 10  wherein the integrated circuit has four or more MEMs sensors and wherein each of the four or more MEMs sensors measures a different parameter. 
     
     
         14 . The MIMS of  claim 10  wherein the integrated circuit has five or more MEMs sensors and wherein each of the five or more MEMs sensors measures a different parameter. 
     
     
         15 . The MIMS of  claim 10  wherein the integrated circuit has six or more MEMs sensors and wherein each of the six or more MEMs sensors measures a different parameter. 
     
     
         16 . The MIMs of  claim 10  wherein the integrated circuit includes at least one of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, an IR sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor. 
     
     
         17 . The MIMs of  claim 10  wherein at least one sensor of the infrared sensor and the two or more MEMs sensors are sealed by depositing a layer using low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo organic chemical vapor deposition, molecular beam epitaxy, sputtering, evaporating, spin-coating, electro-plating, or spray coating. 
     
     
         18 . A monolithically integrated multi-sensor (MIMs) comprising:
 an integrated circuit comprising:
 an infrared sensor configured to measure a parameter; and 
 three or more micro-electromechanical system (MEMs) sensors wherein the infrared sensor and each of the three or more MEMs sensors are configured to measure a different parameter, wherein the infrared sensor and the three or more MEMs sensors are formed at the same time on or in a single silicon substrate and wherein one or more layers of a monolithic semiconductor process that forms the MIMs is configured to form a cap that seals one of the infrared sensor or one of the three or more MEMs sensors from an external environment. 
   
     
     
         19 . The MIMs of  claim 18  wherein the integrated circuit is operatively coupled to a wearable device and wherein the integrated circuit includes at least one of an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, an IR sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor. 
     
     
         20 . The MIMs of  claim 18  wherein the integrated circuit comprises four or more MEMs sensors and wherein the infrared sensor and the four or more MEMs sensors are configured to measure different parameters and wherein the infrared sensor and the four or more MEMs sensors are formed at the same time on or in the single silicon substrate.