Cvd reactor chamber with resistive heating for silicon carbide deposition

Abstract

A CVD reactor for deposition of silicon carbide material on silicon carbide substrates, may comprise: an upper gas manifold and a lower gas manifold; and a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, a multiplicity of planar walls across the width of the box, the walls being equally spaced in a row facing each other and defining a row of channels within the box, the walls comprising mounting fixtures for a plurality of substrates and at least one electrically resistive heater element; wherein the upper gas manifold and the lower gas manifold are configured to attach to the upper and lower surfaces of the substrate carrier, respectively, connect with upper and lower ends of the channels, and isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein the channels are numbered in order along the row; and wherein said electrically resistive heater elements and said mounting fixtures are coated with a material able to withstand exposure to (i) chemicals for removal of silicon carbide, such as ClF 3 , and (ii) process temperatures up to 1700° C., examples of the material including tantalum carbide, diamond and boron nitride.

What is claimed is: 
     
         1 . A chemical vapor deposition (CVD) reactor for single sided deposition of silicon carbide material on silicon carbide substrates, comprising:
 a vacuum chamber;   an upper gas manifold and a lower gas manifold within said vacuum chamber; and   a substrate carrier comprising a gas tight rectangular box open on upper and lower surfaces, said gas tight box comprising a first multiplicity of planar walls across the width of said box, said walls being equally spaced in a row facing each other and defining a row of channels within said box, said walls comprising mounting fixtures for a plurality of substrates, said walls comprising at least one electrically resistive heater element;   wherein said upper gas manifold and said lower gas manifold are configured to attach to said upper and lower surfaces of said substrate carrier, respectively, said upper gas manifold and said lower gas manifold connecting with upper and lower ends of said channels, said upper gas manifold and said lower gas manifold being configured to isolate gas flows in odd numbered channels from gas flows in even numbered channels, wherein said channels are numbered in order along said row, wherein said gas flows through said channels are from one of said upper gas manifold and said lower gas manifold to the other of said upper gas manifold and said lower gas manifold, wherein said upper gas manifold and said lower gas manifold are configured to allow gas flows in odd numbered channels to be in opposite directions to gas flows in even numbered channels, and wherein said electrically resistive heater elements and said mounting fixtures are coated with a material able to withstand exposure to (i) chemicals for removal of silicon carbide, such as ClF 3 , and (ii) process temperatures up to 1700° C., examples of the material including tantalum carbide, diamond and boron nitride.