Semiconductor device including a flexible substrate

Abstract

A display device includes a substrate having flexibility, a transistor having agate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line.

1 - 11 . (canceled) 
     
     
         12 . A semiconductor device comprising:
 a flexible substrate;   a semiconductor layer on the flexible substrate;   a metal layer which at least partially overlaps with the semiconductor layer; and   an insulating layer between the semiconductor layer and the metal layer,   wherein   a thickness of a part of the metal layer overlapping with the semiconductor layer is thinner than that of the metal layer at an area other than the metal layer overlapping with the semiconductor layer.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein
 the part of the metal layer overlapping with the semiconductor layer is made of a first metal and the metal layer at the area other than the metal layer overlapping with the semiconductor layer is made of both the first metal and a second metal.   
     
     
         14 . The semiconductor device according to  claim 13 , wherein
 the first metal is aluminum, and the second metal is titanium.   
     
     
         15 . The semiconductor device according to  claim 13 , wherein
 the semiconductor layer is made of an oxide semiconductor.   
     
     
         16 . The semiconductor device according to  claim 15 , wherein
 a shape of the semiconductor layer is an L like shape.