Monolithically integrated multi-sensor device on a semiconductor substrate and method therefor

Abstract

A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.

What is claimed is: 
     
         1 . A monolithically integrated multi-sensor (MIMs) comprising:
 an integrated circuit formed using a monolithic integrated circuit process comprising:
 an inertial sensor; 
 a first micro-electromechanical system (MEMS) sensor; 
 a second MEMS sensor wherein the inertial sensor, the first MEMS sensor, and the second MEMS sensor are formed on a single semiconductor substrate and wherein the inertial sensor is sealed from an external environment by one or more layers of the monolithic integrated circuit process. 
   
     
     
         2 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the inertial sensor, the first MEMS sensor, and the second MEMS sensor each measure a different parameter. 
     
     
         3 . The monolithically integrated multi-sensor (MIMs) of  claim 1  further including at least a third MEMS sensor wherein the inertial sensor, the first MEMS sensor, the second MEMS sensor, and the third MEMS sensor measures each measure a different parameter. 
     
     
         4 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the inertial sensor is one of an accelerometer or a gyroscope. 
     
     
         5 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein a layer of the MIMS is configured to flex. 
     
     
         6 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein one of the inertial sensor, the first MEMS sensor, or the second MEMS sensor is sealed at a different pressure than the external environment. 
     
     
         7 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein a layer of the MIMs is common to the inertial sensor, the first MEMS sensor, and the second MEMS sensor. 
     
     
         8 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein a layer of the MIMs is configured to form a static structural component and a dynamic structural component within the integrated circuit. 
     
     
         9 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the one or more layers sealing the inertial sensor from the external environment is a protective cap structure and wherein the protective cap structure can be anchored to the single semiconductor substrate. 
     
     
         10 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein one or more openings are formed in a layer of the MIMS to expose one or more sacrificial layers and wherein etchant is configured to couple to the sacrificial layers through the one or more openings to remove the one or more sacrificial layers. 
     
     
         11 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the integrated circuit includes at least one of a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, or a biological sensor. 
     
     
         12 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the integrated circuit includes at least one of LPCVD polycrystalline silicon, epitaxially deposited silicon, amorphous silicon, sputtered silicon, PECVD silicon, SACVD silicon, Atmospheric Pressure CVD, silicon germanium, germanium, polycrystalline germanium silicon, silicon nitride, silicon oxynitride, silicon dioxide, PSG (Phosphosilicate Glass), TEOS (TetraEthylOrthoSilicate), BSG (Borosilicate glass), BPSG (Borophosphosilicate glass), silicon carbide, metal, polyimide, or parylene. 
     
     
         13 . The monolithically integrated multi-sensor (MIMs) of  claim 1  wherein the integrated circuit includes at least one of a low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition, atmospheric pressure chemical vapor deposition, sub atmospheric chemical vapor deposition, physical vapor deposition, atomic layer deposition, metallo-organic chemical vapor deposition, or molecular beam epitaxy or wherein the first sensor can be sealed using one of sputtering, evaporating, spin-coating, electro-plating, or spray coating a material on the integrated circuit. 
     
     
         14 . The monolithically integrated multi-sensor (MIMs) of  claim 1  further including a second integrated circuit coupled to the first integrated circuit via conductive bumps or wire bonds. 
     
     
         15 . The monolithically integrated multi-sensor (MIMs) of  claim 1  further including a second integrated circuit coupled to the first integrated circuit via conductive bumps or wirebonds wherein the second integrated circuit includes at least one sensor. 
     
     
         16 . A monolithically integrated multi-sensor (MIMs) comprising:
 an integrated circuit formed using a monolithic integrated circuit process comprising:
 an inertial sensor; 
 a first sensor; 
 a second sensor wherein the inertial sensor, the first sensor, and the second sensor are formed on a single semiconductor substrate, wherein the inertial sensor, the first sensor, and the second sensor each measure a different parameter, and wherein one or more layers of the monolithic integrated circuit process form a protective cap that seals the inertial sensor from an external environment. 
   
     
     
         17 . The monolithically integrated multi-sensor (MIMs) of  claim 16  wherein the first sensor is a micro-electromechanical system (MEMS) sensor. 
     
     
         18 . The monolithically integrated multi-sensor (MIMs) of  claim 16  further including a third sensor formed on the integrated circuit wherein the inertial sensor, first sensor, second sensor, and third sensor measure a different parameter. 
     
     
         19 . The monolithically integrated multi-sensor (MIMs) of  claim 16  wherein a layer of the MIMs is configured to form a static structural component and a dynamic structural component within the integrated circuit. 
     
     
         20 . A monolithically integrated multi-sensor (MIMs) comprising:
 an integrated circuit formed using a monolithic integrated circuit process comprising:
 an inertial sensor; 
 and three or more sensors wherein the inertial sensor the three or more sensors are formed on a single semiconductor substrate, wherein the inertial sensor and the three or more sensors each measure a different parameter, and wherein one or more layers of the monolithic integrated circuit process form a protective cap that seals the inertial sensor from an external environment.