Antennaless Wireless Device Capable of Operation in Multiple Frequency Regions

Abstract

A radiating system comprises a radiating structure, first and second external ports, and a radiofrequency system. The radiating structure comprises a ground plane layer including a connection point, a single radiation booster including a connection point, and a first internal port defined between the connection points of the single radiation booster and the ground plane layer. The first and second external ports each provide operation in at least one frequency band. The radiofrequency system includes a first port connected to the first internal port of the radiating structure, and second and third ports respectively connected to the first and second external ports.

1 - 16 . (canceled) 
     
     
         17 . A radiation booster comprising:
 a substantially planar conductive element defined by a polygonal contour, the radiation booster being configured to be part of a radiating structure of a radiating system that further includes a radiofrequency system and an external port, wherein:   the radiating structure further comprises a ground plane layer capable of supporting at least two radiation modes, the ground plane layer including a connection point, the radiation booster being substantially coplanar with the ground plane layer;   the radiation booster couples electromagnetic energy from/to the ground plane layer, the radiation booster including a connection point, an internal port of the radiation booster being defined between the connection point of the radiation booster and the connection point of the ground plane layer;   the radiating system operates at first and second frequency regions, the second frequency region having a lowest frequency higher than a highest frequency of the first frequency region;   a first resonance frequency at the internal port of the radiation booster when the radiofrequency system included in the radiating system is disconnected, is above the first frequency region of the radiating system; and   a first ground plane layer radiation mode is responsible for operation in the first frequency region, and a second ground plane layer radiation mode is responsible for operation in the second frequency region.   
     
     
         18 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 3.0. 
     
     
         19 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 3.4. 
     
     
         20 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 3.8. 
     
     
         21 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 4.0. 
     
     
         22 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 4.2. 
     
     
         23 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 4.4. 
     
     
         24 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 4.6. 
     
     
         25 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 4.8. 
     
     
         26 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 5.0. 
     
     
         27 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 5.4. 
     
     
         28 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 5.8. 
     
     
         29 . The radiation booster of  claim 17 , wherein a ratio between the first resonance frequency and the highest frequency of the first frequency region is greater than 6.0. 
     
     
         30 . The radiation booster of  claim 17 , wherein an input impedance of the radiating structure features a reactive behavior within the first frequency region. 
     
     
         31 . The radiation booster of  claim 30 , wherein the input impedance of the radiating structure features a capacitive behavior within the first frequency region. 
     
     
         32 . The radiation booster of  claim 17 , wherein an input impedance of the radiating structure features a reactive behavior within the first and second frequency regions. 
     
     
         33 . The radiation booster of  claim 17 , wherein a frequency region of operation of the radiating system is contained within one of the following: 824-960 MHz, 1710-2170 MHz, 2.4-2.5 GHz, and 3.4-3.6 GHz. 
     
     
         34 . The radiation booster of  claim 17 , wherein a first frequency region is contained within the frequency range 824-960 MHz and the second frequency region is contained within the frequency range 1710-2170 MHz or 2.4-2.5 GHz. 
     
     
         35 . The radiation booster of  claim 34 , wherein the second frequency region of operation is contained within the frequency range 1710-2170 MHz. 
     
     
         36 . The radiation booster of  claim 17 , wherein the radiating system operates in one or more cellular communication standards.