Devices incorporating integrated dectors and ultra-small vertical cavity surface emitting laser emitters

Abstract

A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.

1 . A semiconductor device comprising:
 a detector structure, wherein the detector structure comprises:
 an integrated circuit on a substrate; and 
 a photo detector on an upper surface of the integrated circuit that is opposite the substrate, wherein the substrate is non-native to the photo detector.