Selective Deposition Of A Heterocyclic Passivation Film On A Metal Surface

Abstract

Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.

What is claimed is: 
     
         1 . A method of selectively depositing a film on a substrate, the method comprising:
 exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber; and   selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.   
     
     
         2 . The method of  claim 1 , wherein the heterocyclic headgroup comprises one or more of N, O, S, Se and P atoms. 
     
     
         3 . The method of  claim 1 , wherein the heterocyclic headgroup comprises one or more of pyrrole, pyrrolidine, pyrazole, imidazole, furan, biimidazole, thiophene, thiazole, thiadiazole, pyridine, pyridazine, pyrimidine, quinoxaline, indazole, thiazine, phosphinine, phosphinoline, and phosphole. 
     
     
         4 . The method of  claim 1 , wherein the tailgroup comprises one or more of a phenyl group and a carbon chain. 
     
     
         5 . The method of  claim 4 , wherein the carbon chain has a length is in the range of from 1 to 50 carbon atoms. 
     
     
         6 . The method of  claim 4 , wherein the tailgroup has a length in the range of from 1 Å to 75 Å. 
     
     
         7 . The method of  claim 4 , wherein tailgroup has one or more substitute R groups in the range of from 1 to 50. 
     
     
         8 . The method of  claim 7 , wherein the substitute R group comprises one or more of alkyl, cycloalkyl, aryl groups which may be linear or branched containing the following bonds carbon-carbon single/double/triple bonds. 
     
     
         9 . The method of  claim 1 , wherein the metal surface comprises one or more of copper, cobalt, nickel, tungsten, vanadium, ruthenium, chromium, iron, platinum, gold, silver, molybdenum, gallium, indium, indium tin oxide, fluorine doped tin oxide and Al-doped zinc oxide. 
     
     
         10 . The method of  claim 9 , wherein the heterocyclic reactant remains bound to the metal surface at a higher temperature, wherein the higher temperature is in the range of 50° C. to 350° C. 
     
     
         11 . The method of  claim 4 , wherein the carbon chain has a length and the tailgroup has substitutions such that a sum of the carbon chain length and tailgroup substitutions is not greater than 50 carbon atoms. 
     
     
         12 . The method of  claim 1 , wherein the density of the passivation film is in the range of from 1×10 13  to 1×10 14  molecules per cm 2 . 
     
     
         13 . The method of  claim 1 , wherein the thickness of passivation film is in the range of from 5 Å to 100 Å. 
     
     
         14 . The method of  claim 1 , wherein the dielectric surface comprises one or more of SiO x , Si x N y , Si, SiON, AlO x , Al 2 O 3 , HfO x , ZrO 2 , TiO x , TiN, Ta x O 5 , Ta 2 O 5 , Y 2 O 3 , La 2 O 3 , AlN, MgO, CaF 2 , LiF, SrO, SiC, BaO, HfSiO 4 , LaAlO 3 , Nb 2 O 5 , BaTiO 3 , SrTiO 3 , Bi 4 Ti 3 O 12 , Pb(Zr, Ti)O 3 , CaCu 3 Ti 4 O 12 , LiNbO 3 , BaTiO 3 , LiNbO 3  and KNbO 3 . 
     
     
         15 . The method of  claim 1  further comprising depositing a dielectric material on the dielectric surface, wherein the dielectric material comprises one or more of SiO x , Si x N y , Si, SiON, AlO x , Al 2 O 3 , HfO x , ZrO 2 , TiO x , TiN, Ta x O 5 , Ta 2 O 5 , Y 2 O 3 , La 2 O 3 , AlN, MgO, CaF 2 , LiF, SrO, SiC, BaO, HfSiO 4 , LaAlO 3 , Nb 2 O 5 , BaTiO 3 , SrTiO 3 , Bi 4 Ti 3 O 12 , Pb(Zr, Ti)O 3 , CaCu 3 Ti 4 O 12 , LiNbO 3 , BaTiO 3 , LiNbO 3  and KNbO 3 . 
     
     
         16 . The method of  claim 14 , wherein one or more of the passivation layer and the dielectric material is deposited by vapor phase deposition. 
     
     
         17 . The method of  claim 15 , wherein the vapor pressure of the heterocyclic compound is in the range of from 0.00001 mmHg to 150 mmHg at 25° C. 
     
     
         18 . The method of  claim 14 , further comprising decomposing the passivation layer at a decomposition temperature, wherein the decomposition temperature is higher than the stability temperature. 
     
     
         19 . A method of selectively depositing a film on a substrate, the method comprising:
 exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber; and   selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface and wherein the heterocyclic headgroup comprises one or more of N, O, S, Se and P atoms, and wherein the tailgroup comprises one or more of a phenyl group and a carbon chain and the carbon chain has a length is in the range of from 1 to 50 carbon atoms.   
     
     
         20 . A non-transitory computer readable medium including instructions, that, when executed by a controller of a substrate processing chamber, causes the substrate processing chamber to expose a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber, and selectively deposit the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.