Laser element

Abstract

A laser element comprises a substrate, an adhesive layer, and a laser unit adhesive to the substrate by the adhesive layer. The laser unit includes a front conductive structure, a first type semiconductor stack, an active layer, a second type semiconductor stack, a patterned insulating layer, a back conductive structure. The back conductive structure includes a first electrode and a second electrode, and the first electrode of the back conductive structure contacts the second type semiconductor stack. A via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack, and a conductive channel located in the via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure. A first passivation layer formed on a sidewall of the via hole and located between the conductive channel and the sidewall of the via hole.

What is claimed is: 
     
         1 . A laser element, comprising:
 a substrate;   an adhesive layer; and   a laser unit adhesive to the substrate by the adhesive layer, wherein the laser unit comprising:
 a front conductive structure; 
 a first type semiconductor stack, and the front conductive structure located on the first type semiconductor stack; 
 an active layer; 
 a second type semiconductor stack, and the active layer located between the first type semiconductor stack and the second type semiconductor stack; 
 a patterned insulating layer on the second type semiconductor stack; 
   a back conductive structure on the patterned insulating layer, and the back conductive structure includes a first electrode and a second electrode, and wherein the first electrode of the back conductive structure contacts the second type semiconductor stack;
 a first via hole passing through the patterned insulating layer, the second type semiconductor stack, the active layer and the first type semiconductor stack; 
 a first conductive channel located in the first via hole and electrically connected to the second electrode of the back conductive structure and the front conductive structure; and 
 a first passivation layer formed on a sidewall of the first via hole and located between the first conductive channel and the sidewall of the first via hole. 
   
     
     
         2 . The laser element according to  claim 1 , wherein the first passivation layer contacts the patterned insulating layer on the second type semiconductor stack. 
     
     
         3 . The laser element according to  claim 1 , wherein the back conductive structure further comprising a third electrode and a fourth electrode, and the first electrode, the second electrode, the third electrode and the fourth electrode are separated from each other. 
     
     
         4 . The laser element according to  claim 3 , further comprising:
 a conductive layer on the substrate; and   second conductive channels on sidewalls of the laser unit and electrically isolated with the laser unit by a second passivation layer, wherein the conductive layer, the second conductive channels, the third electrode and the fourth electrode are electrically connected to each other.   
     
     
         5 . The laser element according to  claim 4 , wherein the conductive layer is disposed on one side of the substrate opposite to the adhesive layer, and the second conductive channel extends across the substrate and is electrically connected to the conductive layer. 
     
     
         6 . The laser element according to  claim 4 , wherein the conductive layer is disposed between the substrate and the laser unit, and the second conductive channel extends across the laser unit and is electrically connected to the conductive layer. 
     
     
         7 . The laser element according to  claim 4 , wherein the adhesive layer is disposed between the substrate and the conductive layer, and the second conductive channel extends across the laser unit and is electrically connected to the conductive layer. 
     
     
         8 . The laser element according to  claim 4 , wherein the conductive layer forms a conductive region which is located on a periphery of the adhesive layer. 
     
     
         9 . The laser element according to  claim 8 , wherein the conductive region surrounds the laser unit and is electrically separated from the laser unit. 
     
     
         10 . The laser element according to  claim 8 , wherein the conductive region directly connected to a periphery of the substrate, and the adhesive layer is embraced by the substrate and the conductive region. 
     
     
         11 . The laser element according to  claim 3 , wherein at least two of the first electrode, the second electrode, the third electrode and the fourth electrode are coplanar. 
     
     
         12 . The laser element according to  claim 1 , further comprising a conductive layer on the substrate, and from a top view of the laser element, the conductive layer surrounds a periphery of the substrate and has at least one hollow region. 
     
     
         13 . The laser element according to  claim 1 , further comprising a conductive layer on the substrate, and from a top view of the laser element, the conductive layer has plural hollow regions arranged as an array. 
     
     
         14 . The laser element according to  claim 1 , further comprising a conductive layer on the substrate, from a top view of the laser element, wherein the conductive layer forms a strip-like structure or a snakelike geometry structure on the substrate. 
     
     
         15 . The laser element according to  claim 1 , further comprising an ohmic contact formed between the back conductive structure and the second type semiconductor stack. 
     
     
         16 . The laser element according to  claim 4 , from a top view of the laser element, wherein two of the second conductive channels are respectively disposed on opposite sidewalls of the laser unit. 
     
     
         17 . The laser element according to  claim 4 , from a top view of the laser element, wherein at least one of the second conductive channels has an “L” shape. 
     
     
         18 . The laser element according to  claim 4 , wherein the conductive layer, the third electrode and the fourth electrode are integrated into the laser element and provided to connected to a control circuit.