Fet based sensory systems

Abstract

A sensor including one or more transistors; and one or more sensing elements, wherein an edge behaves as moving gate of said one or more transistors, an electric field is applied to said edge, said one or more transistors is/are biased, said one or more sensing elements is/are flexible, source and drain wells of said one or more transistors can be coplanar or stacked, said edge can move in a lateral or a parallel direction with respect to a transistor current, said edge can move in a vertical or a perpendicular direction with respect to said transistor current, and the magnitude of the change in said drain current determines the sensitivity.

What is claimed is: 
     
         1 . A sensor comprising:
 one or more transistors; and   one or more sensing elements, wherein   an edge behaves as moving gate of said one or more transistors,   an electric field is applied to said edge,   said one or more transistors is/are biased,   said one or more sensing elements is/are flexible,   source and drain wells of said one or more transistors can be coplanar or stacked,   said edge can move in a lateral or a parallel direction with respect to a transistor current,   said edge can move in a vertical or a perpendicular direction with respect to said transistor current, and   the magnitude of the change in said drain current determines the sensitivity, wherein   said one or more sensing elements is/are one or more cantilevers.   
     
     
         2 . The sensor according to  claim 1 , wherein
 said one or more cantilevers can flex due to acoustic signals,   said one or more cantilevers can flex due to pressure, and   deflection in said one or more cantilevers modulates a drain current in said one or more transistors.   
     
     
         3 . The sensor according to  claim 1 , wherein
 said one or more cantilevers can flex due to acoustic signals,   said one or more cantilevers can flex due to pressure,   deflection in said one or more cantilevers modulates a drain current in said one or more transistors, and   the magnitude of the change in said drain current determines the sensitivity to said acoustic signals or said pressure.   
     
     
         4 . A sensor comprising:
 one or more transistors; and   one or more sensing elements, wherein   an edge behaves as moving gate of said one or more transistors,   an electric field is applied to said edge,   said one or more transistors is/are biased,   said one or more sensing elements is/are flexible,   source and drain wells of said one or more transistors can be coplanar or stacked,   said edge can move in a lateral or a parallel direction with respect to a transistor current,   said edge can move in a vertical or a perpendicular direction with respect to said transistor current,   the magnitude of the change in said drain current determines the sensitivity, and   one or more cantilevers, wherein   said one or more sensing elements is/are one or more proof masses,   said one or more proof masses is/are coupled to said one or more cantilevers,   said one or more proof masses coupled to the said one or more cantilevers displaces with two or more degrees of freedom,   said one or more proof masses resonates in one direction and displaces in another direction due to a Coriolis force,   said one or more proof masses displacement modulates a drain current in said one or more transistors, and   the displacement of said one or more proof masses can be measured in the direction of the resonance and Coriolis force displacement.   
     
     
         5 . A sensor comprising:
 one or more transistors; and   one or more sensing elements, wherein   an edge behaves as moving gate of said one or more transistors,   an electric field is applied to said edge,   said one or more transistors is/are biased,   said one or more sensing elements is/are flexible,   source and drain wells of said one or more transistors can be coplanar or stacked,   said edge can move in a lateral or a parallel direction with respect to a transistor current,   said edge can move in a vertical or a perpendicular direction with respect to said transistor current,   the magnitude of the change in said drain current determines the sensitivity, and   one or more cantilevers, wherein   said one or more sensing elements is/are one or more proof masses,   said one or more proof masses is/are coupled to said one or more cantilevers,   said one or more proof masses coupled to the said one or more cantilevers displaces with two or more degrees of freedom,   said one or more proof masses resonates in one direction and displaces in another direction due to a Coriolis force,   said one or more proof masses displacement modulates a drain current in said one or more transistors,   the displacement of said one or more proof masses can be measured in the direction of the resonance and Coriolis force displacement, and   the magnitude of the change in said drain current determines the sensitivity of the displacement of said one or more proof masses.