US2022154325A1PendingUtilityA1

Articles coated with crack-resistant fluoro-annealed films and methods of making

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Assignee: ENTEGRIS INCPriority: Nov 18, 2020Filed: Nov 16, 2021Published: May 19, 2022
Est. expiryNov 18, 2040(~14.3 yrs left)· nominal 20-yr term from priority
Inventors:Nilesh GundaJijun LaoSamuel J. AngeloniWolfram Neff
H10P 95/90H10P 14/69396H10P 14/44H10W 42/121H10W 74/137C23C 14/5846C23C 14/083C23C 28/042H10P 14/6529H10P 14/6329C23C 14/0036H01J 37/32477C23C 14/5806C23C 14/3471H01L 23/562H01L 21/02192H01L 21/324H01L 21/2855C23C 14/221
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Claims

Abstract

Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate. The film comprises a fluorinated metal oxide containing yttrium wherein the yttrium oxide is deposited using an AC power source. The film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film and the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An article comprising:
 a substrate; and   a protective film overlying at least a portion of the substrate,   wherein the film comprises a fluorinated metal oxide containing yttrium,   wherein the film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film, and   wherein the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.   
     
     
         2 . The article of  claim 1 , wherein after fluoro-annealing, the film has no surface cracks on the surface of the film visible when viewing the surface of the film with a laser confocal microscope at a magnification of 400×. 
     
     
         3 . The article of  claim 1 , wherein the substrate is alumina. 
     
     
         4 . The article of  claim 1 , wherein the substrate is silicon. 
     
     
         5 . The article of  claim 1 , wherein the film has a fluorine atomic % of at least 20 at a depth of 30% of the total thickness of the film. 
     
     
         6 . The article of  claim 1 , wherein the film has a fluorine atomic % of at least 30 at a depth of 30% of the total thickness of the film. 
     
     
         7 . The article of  claim 1 , wherein the film has a fluorine atomic % of at least 10 at a depth of 50% of the total thickness of the film. 
     
     
         8 . The article of  claim 1 , wherein the film has a fluorine atomic % of at least 20 at a depth of 50% of the total thickness of the film. 
     
     
         9 . The article of  claim 1 , wherein the film has a fluorine atomic % of at least 30 at a depth of 50% of the total thickness of the film. 
     
     
         10 . A method comprising:
 depositing a metal oxide containing yttrium onto a substrate using a physical vapor deposition technique using an alternating current (AC) power supply, the metal oxide forming a film overlying the substrate; and   fluoro-annealing the film,   wherein after fluoro-annealing, the film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film.   
     
     
         11 . The method of  claim 10 , wherein after fluoro-annealing, the film has no surface cracks on the surface the film visible when viewing the surface of the film with a laser confocal microscope at a magnification of 400×. 
     
     
         12 . The method of  claim 10 , wherein after fluoro-annealing, the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×. 
     
     
         13 . The method of  claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 20 at a depth of 30% of the total thickness of the film. 
     
     
         14 . The method of  claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 30 at a depth of 30% of the total thickness of the film. 
     
     
         15 . The method of  claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 20 at a depth of 50% of the total thickness of the film. 
     
     
         16 . The method of  claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 30 at a depth of 50% of the total thickness of the film. 
     
     
         17 . The method of  claim 10 , wherein the fluoro-annealing is performed at a temperature of about 300° C. to about 650° C. in fluorine containing atmosphere. 
     
     
         18 . The method of  claim 10 , wherein the substrate is alumina. 
     
     
         19 . The method of  claim 10 , wherein the substrate is silicon. 
     
     
         20 . An article made according to the process of  claim 10 .

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