US2022155253A1PendingUtilityA1

Biosensors with charge sensing and debye screening

Assignee: KHYRON TECH INCPriority: Nov 17, 2020Filed: Nov 8, 2021Published: May 19, 2022
Est. expiryNov 17, 2040(~14.3 yrs left)· nominal 20-yr term from priority
H10D 64/411G01N 27/4145G01N 27/4146H01L 29/42316
42
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Claims

Abstract

A system having a biosensor as well as a biomarker, a recognition motif, an anti-Debye screening layer, and a charge sensing layer. The biosensor can include the recognition motif, the anti-Debye screening layer, and the charge sensing layer. A method can implement the system to detect the biomarker using a combination of the recognition motif, the anti-Debye screening layer, and the charge sensing layer. A single device can include a recognition motif, an anti-Debye screening layer, and a charge sensing layer, and the recognition motif can receive a biomarker which allows the device to sense the biomarker. The system, method and device each can implement decoupled charge-based sensing and Debye screening.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A system, comprising:
 an anti-Debye screening layer; and   a charge sensing layer,   wherein the anti-Debye screening layer and the charge sensing layer are parts of a biosensor, and   wherein the anti-Debye screening layer comprises non-ionic hydrophilic compounds.   
     
     
         2 . The system of  claim 1 , further comprising a recognition motif. 
     
     
         3 . The system of  claim 2 , wherein the recognition motif comprises an antibody. 
     
     
         4 . The system of  claim 2 , wherein the recognition motif comprises deoxyribonucleic acid (DNA) aptamer. 
     
     
         5 . The system of  claim 2 , wherein the recognition motif comprises a ribonucleic acid (RNA) aptamer. 
     
     
         6 . The system of  claim 2 , further comprising a homing device configured to operate with the recognition motif. 
     
     
         7 . The system of  claim 6 , wherein the homing device comprises a magnetic nanoparticle. 
     
     
         8 . The system of  claim 6 , wherein the homing device comprises a dielectric particle. 
     
     
         9 . The system of  claim 1 , further comprising a passivation layer adjoining the anti-Debye screening layer. 
     
     
         10 . The system of  claim 9 ,
 wherein the charge sensing layer comprises an open-gate metal oxide semiconductor field effect transistor (MOSFET),   wherein the open-gate MOSFET interfaces the passivation layer and the anti-Debye screening layer, and   wherein the open-gate MOSFET comprises N-type metal-oxide-semiconductor (NMOS) logic.   
     
     
         11 . The system of  claim 9 ,
 wherein the charge sensing layer comprises an open-gate metal oxide semiconductor field effect transistor (MOSFET),   wherein the open-gate MOSFET interfaces the passivation layer and the anti-Debye screening layer, and   wherein the open-gate MOSFET comprises P-type metal-oxide-semiconductor (PMOS) logic.   
     
     
         12 . The system of  claim 1 , wherein the anti-Debye screening layer comprises a linear non-ionic polymer chain. 
     
     
         13 . The system of  claim 1 , wherein the anti-Debye screening layer comprises branched polyols. 
     
     
         14 . The system of  claim 1 , wherein the anti-Debye screening layer comprises trehalose. 
     
     
         15 . The system of  claim 1 , wherein the charge sensing layer comprises a charge sensor that comprises a metal oxide semiconductor (MOS) capacitor. 
     
     
         16 . The system of  claim 1 , wherein the charge sensing layer comprises a charge sensor that comprises a high-electron-mobility transistor (HEMT). 
     
     
         17 . The system of  claim 1 , wherein the charge sensing layer comprises a charge sensor that comprises a complementary metal oxide semiconductor (CMOS) gate field effect transistor. 
     
     
         18 . A system, comprising:
 an anti-Debye screening layer; and   a charge sensing layer comprising an open-gate metal oxide semiconductor field effect transistor (MOSFET),   wherein the anti-Debye screening layer and the charge sensing layer are parts of a biosensor, and   wherein the anti-Debye screening layer comprises a linear non-ionic polymer chain, branched polyols, or trehalose.   
     
     
         19 . The system of  claim 18 , further comprising a passivation layer adjoining the anti-Debye screening layer and interfacing the open-gate MOSFET. 
     
     
         20 . A system, comprising:
 an anti-Debye screening layer;   an open-gate metal oxide semiconductor field effect transistor (MOSFET); and   a recognition motif,   wherein the anti-Debye screening layer, the open-gate MOSFET, and the recognition motif are parts of a biosensor, and   wherein the anti-Debye screening layer comprises a linear non-ionic polymer chain, branched polyols, or trehalose.

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