US2022158061A1PendingUtilityA1

Optical-semiconductor device and method for manufacturing the same

Assignee: NICHIA CORPPriority: Sep 9, 2008Filed: Jan 31, 2022Published: May 19, 2022
Est. expirySep 9, 2028(~2.1 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 90/00H10W 74/10H10W 74/00H10W 72/5363H10W 72/536H10W 72/0198H10H 20/8506H10H 20/0364H10H 20/854H10H 20/852H10H 20/85H10H 20/82H10H 20/01H10F 77/93H10F 77/50H10H 20/8514H10H 20/857H01L 25/167H01L 33/52H01L 24/97H01L 31/0203H01L 31/02002H01L 33/62H01L 33/486H10W 99/00
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Claims

Abstract

A method for manufacturing an optical-semiconductor device, including forming a plurality of first and second electrically conductive members that are disposed separately from each other on a support substrate; providing a base member formed from a light blocking resin between the first and second electrically conductive members; mounting an optical-semiconductor element on the first and/or second electrically conductive member; covering the optical-semiconductor element by a sealing member formed from a translucent resin; and obtaining individual optical-semiconductor devices after removing the support substrate.

Claims

exact text as granted — not AI-modified
1 . An optical-semiconductor device comprising:
 an optical-semiconductor element;   at least two electrically conductive members to which the optical-semiconductor element is connected, said at least two electrically conductive members having bottom surfaces that constitute an external surface of the optical-semiconductor device;   a base member disposed between said at least two electrically conductive members in a plan view and including a light blocking resin having reflectivity of more than 60% at a peak wavelength of light emitted from said optical-semiconductor element; and   a sealing member formed on said optical-semiconductor element,   wherein the top surface of said base member is located lower than the top surface of the optical-semiconductor element, and   wherein side surfaces of said base member and said sealing member constitute external side surfaces of said optical-semiconductor device.   
     
     
         2 . The optical-semiconductor device according to  claim 1 , wherein said base member extends from the external side surface of said optical-semiconductor device to a side surface of said optical-semiconductor element. 
     
     
         3 . The optical-semiconductor device according to  claim 1 , wherein a positive electrode and a negative electrode of said optical-semiconductor element are respectively connected to said at least two electrically conductive members without using a conductive wire. 
     
     
         4 . The optical-semiconductor device according to  claim 1 , wherein the optical-semiconductor device has a substantially rectangular parallelepiped shape. 
     
     
         5 . The optical-semiconductor device according to  claim 1 , wherein a side surface of said at least two electrically conductive members has a projection located away from the bottom surface of said at least two electrically conductive members so as to suppress detachment of said at least two electrically conductive members from said base member. 
     
     
         6 . The optical-semiconductor device according to  claim 1 , wherein said sealing member includes a phosphor absorbing at least a part of the light emitted from said optical-semiconductor element and emitting light having a different wavelength from the light emitted from said optical-semiconductor element. 
     
     
         7 . The optical-semiconductor device according to  claim 6 , wherein said sealing member contacts with the base member. 
     
     
         8 . The optical-semiconductor device according to  claim 6 , wherein said sealing member contacts with a top surface of the optical-semiconductor element. 
     
     
         9 . The optical-semiconductor device according to  claim 1 , wherein said base member contacts with the bottom surface of said optical-semiconductor element. 
     
     
         10 . The optical-semiconductor device according to  claim 1 , wherein said base member constitutes a part of the bottom surface of the optical semiconductor device. 
     
     
         11 . The optical-semiconductor device according to  claim 1 , wherein said optical-semiconductor element has a positive electrode and a negative electrode on the same side. 
     
     
         12 . The optical-semiconductor device according to  claim 1 , wherein said base member includes TiO2. 
     
     
         13 . The optical-semiconductor device according to  claim 1 , wherein the top surface of said sealing member has a shape of convex lens, concave lens or Fresnel lens. 
     
     
         14 . The optical-semiconductor device according to  claim 1  and further comprising a lens member. 
     
     
         15 . The optical-semiconductor device according to  claim 2 , wherein a positive electrode and a negative electrode of said optical-semiconductor element are respectively connected to said at least two electrically conductive members without using a conductive wire. 
     
     
         16 . The optical-semiconductor device according to  claim 15 , wherein the optical-semiconductor device has a substantially rectangular parallelepiped shape. 
     
     
         17 . The optical-semiconductor device according to  claim 16 , wherein said sealing member includes a phosphor absorbing at least a part of the light emitted from said optical-semiconductor element and emitting light having a different wavelength from the light emitted from said optical-semiconductor element. 
     
     
         18 . The optical-semiconductor device according to  claim 7 , wherein said sealing member contacts with a top surface of the optical-semiconductor element. 
     
     
         19 . The optical-semiconductor device according to  claim 18 , wherein said base member contacts with the bottom surface of said optical-semiconductor element. 
     
     
         20 . The optical-semiconductor device according to  claim 19 , wherein said base member constitutes a part of the bottom surface of the optical semiconductor device.

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