Systems and methods of additive printing of functional electronic circuits

Abstract

A composition, method, and system for directly printing and creating complete functional 3D electronic circuits and devices without any thermal or laser post-processing treatment, by using at least Triphenylamine (TPA) as a powder binding agent. The composition can have mechanical characteristics that allow it to be melted and extruded on a structure, and electrical properties that allow it to function as at least one of a conductor, insulator, resistor, p-type semiconductor, n-type semiconductor, or capacitor.

What is claimed is: 
     
         1 . A composition for use in 3D printing of electronic devices, comprising:
 at least Triphenylamine (TPA), wherein   the TPA is used as a powder binding agent in the composition, and   the composition is to be melted and extruded on a structure.   
     
     
         2 . The composition of  claim 1 , wherein
 the composition is insulating, and   the TPA forms about 99% of the composition by weight.   
     
     
         3 . The composition of  claim 1 , wherein
 the composition is insulating,   Polylactide (PLA) forms about 25% of the composition by weight, and   the TPA forms about 75% of the composition by weight.   
     
     
         4 . The composition of  claim 1 , wherein
 the composition is conducting,   graphene forms at least about 45% of the composition by weight, and silver (Ag) forms at least about 15% of the composition by weight, and   the graphene and Ag are in a powder form with panicle size ranging from about 100 um to about 100,000 nm.   
     
     
         5 . The composition of  claim 1 , wherein
 the composition is resistive,   graphite forms at least about 25% of the composition by weight, and silver (Ag) forms at least about 10% of the composition by weight, and   the graphite and Ag are in a powder form with particle size ranging from about 100 nm to about 100,000 nm.   
     
     
         6 . The composition of  claim 1 , wherein
 the composition is resistive,   PLA forms at least about 25% of the composition, by weight, graphite forms at least about 25% of the composition by weight, and silver (Ag) forms at least about 10% of the composition by weight, and   the graphite and Ag are in a powder form with particle size ranging from about 100 nm to about 100,000 nm.   
     
     
         7 . The composition of  claim 1 , wherein
 the composition is capacitive,   Titanium dioxide (TiO 2 ) forms at least about 35% of the composition by weight, and   the TiO 2  is in a powder form with particle size ranging from about 100 nm to about 100,000 nm.   
     
     
         8 . The composition of  claim 1 , wherein
 the composition is capacitive,   PLA forms at least about 30% of the composition by weight and Titanium dioxide (TiO 2 ) forms at least about 35% of the composition by weight, and the TiO 2  is in a powder form with particle size ranging from about 100 nm to about 100,000 nm.   
     
     
         9 . The composition of  claim 1 , wherein
 the composition is semiconducting,   silver (Ag) forms at least about 5% of the composition by weight, and n-type Silicon semiconductor (Si—N) forms at least about 50% of the composition by weight, and   the Si—N is in a wafer form with a particle size of about 100 um.   
     
     
         10 . The composition of  claim 1 , wherein
 the composition is semiconducting,   silver (Ag) forms at least about 5% of the composition by weight, and p-type Silicon semiconductor (Si—P) forms at least about 50% of the composition by weight, and   the Si—P is in a wafer form with a particle size of about 100 um.   
     
     
         11 . A process of manufacturing the composition of  claim 1 , comprising:
 melting the TPA at a temperature of at least about 140° C. in an enclosed container for at least about 15 minutes;   adding one or more powders to the container and stirring for about two hours for homogeneity;   reducing the temperature to about 100° C.;   applying a filament cap to the container;   extruding a predefined length of a filament at a particular diameter; and   cooling the filament into rolls for use in the 3D printing of electronic devices.   
     
     
         12 . A method of manufacturing a device, the method comprising:
 mixing ultraviolet (UV) curable liquid epoxy with at least one nanopowder to form a mixture;   dispensing the mixture on a non-conducting glass surface;   curing the dispensed mixture using an UV light emitting diode (LED) source; and   melting the cured mixture to a semi-liquid state that is extruded from a print head to form the device.   
     
     
         13 . The method of  claim 12 , wherein the mixing comprises:
 fast blending the at least one nanopowder with UV curable liquid epoxy to evenly combine the at least one nanopowder and the UV curable liquid epoxy, and   the LED source has a maximum intensity of 16 MW/cm2 and a duration for the curing is between 20 seconds and 120 seconds.   
     
     
         14 . A method of manufacturing a device, the method comprising:
 mixing ultraviolet (UV) curable liquid epoxy with TPA and at least one nanopowder to form a mixture;   dispensing the mixture on a non-conducting glass surface;   curing the dispensed mixture using an UV light emitting diode (LED) source; and   melting the cured mixture to a semi-liquid state that is extruded from a print head to form the device.   
     
     
         15 . The method of  claim 14 , wherein the mixing comprises:
 fast blending the at least one nanopowder with UV curable liquid epoxy to evenly combine the at least one nanopowder and the UV curable liquid epoxy, and   the LED source has a maximum intensity of 16 MW/cm2 and a duration for the curing is between 20 seconds and 120 seconds.