US2022220603A1PendingUtilityA1

Sputtering targets and devices including mo, nb, and ta, and methods

78
Assignee: STARCK H C INCPriority: Jan 12, 2015Filed: Mar 14, 2022Published: Jul 14, 2022
Est. expiryJan 12, 2035(~8.5 yrs left)· nominal 20-yr term from priority
Inventors:Shuwei SunGary Alan RozakQi ZhangBarbara CoxYen-Te Lee
C23C 14/083C23C 14/165C23C 14/3407C23C 14/3414C23C 14/14C22C 21/00C22C 27/04G06F 2203/04103H01J 37/3429C23C 14/22C23C 14/5873
78
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Claims

Abstract

Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.

Claims

exact text as granted — not AI-modified
1 .- 20 . (canceled) 
     
     
         21 . A method of fabricating an electronic device, the method comprising:
 sputtering a sputtering target to form an alloy layer over a substrate, wherein (a) the sputtering target comprises (i) about 88 atomic percent to about 97 atomic percent molybdenum, (ii) about 2 atomic percent to about 8 atomic percent niobium, and (iii) about 0.5 atomic percent to about 5 atomic percent tantalum, and (b) the alloy layer comprises molybdenum, niobium, and tantalum;   forming a metal layer over the alloy layer;   after forming the metal layer, sputtering the sputtering target in a presence of oxygen to form an oxide layer over the alloy layer and the metal layer, wherein the oxide layer comprises molybdenum, niobium, tantalum, and oxygen; and   thereafter, etching away portions of the alloy layer, the metal layer, and the oxide layer.   
     
     
         22 . The method of  claim 21 , wherein the metal layer is in direct mechanical contact with the alloy layer. 
     
     
         23 . The method of  claim 22 , wherein the metal layer is in direct mechanical contact with the oxide layer. 
     
     
         24 . The method of  claim 21 , wherein the metal layer comprises at least one of Al, Fe, Cu, Ag, Au, W, Zn, Pt, or Sn. 
     
     
         25 . The method of  claim 21 , wherein the metal layer comprises at least one of Al, Cu, Ag, Au, or Pt. 
     
     
         26 . The method of  claim 21 , wherein the alloy layer and the oxide layer have the same atomic ratio of Mo:Ta, Nb:Ta, and Mo:Nb. 
     
     
         27 . The method of  claim 21 , wherein the portions of the alloy layer and the metal layer are etched away in a single etch step. 
     
     
         28 . The method of  claim 21 , wherein the portions of the alloy layer, the metal layer, and the oxide layer are etched away in a single etch step. 
     
     
         29 . The method of  claim 21 , further comprising:
 forming an input component over the substrate, the input component comprising a plurality of touch sensors; and   forming a transparent cover over the input component.   
     
     
         30 . The method of  claim 21 , wherein the sputtering target comprises about 0.7 atomic percent to about 4 atomic percent tantalum. 
     
     
         31 . The method of  claim 21 , wherein the sputtering target comprises about 89 atomic percent to about 96 atomic percent molybdenum. 
     
     
         32 . The method of  claim 21 , wherein the sputtering target comprises about 2.8 atomic percent to about 7.6 atomic percent niobium. 
     
     
         33 . The method of  claim 21 , wherein the sputtering target comprises about 0.7 atomic percent to about 3.7 atomic percent tantalum. 
     
     
         34 . The method of  claim 21 , wherein the total amount of the molybdenum, the niobium, and tantalum atoms in the sputtering target is about 95 atomic percent or more. 
     
     
         35 . The method of  claim 21 , wherein the total amount of the molybdenum, the niobium, and tantalum atoms in the sputtering target is about 99.8 atomic percent or more. 
     
     
         36 . A method of fabricating an electronic device, the method comprising:
 forming a metal layer over a substrate;   sputtering a sputtering target to form an alloy layer over the metal layer, wherein (a) the sputtering target comprises (i) about 88 atomic percent to about 97 atomic percent molybdenum, (ii) about 2 atomic percent to about 8 atomic percent niobium, and (iii) about 0.5 atomic percent to about 5 atomic percent tantalum, and (b) the alloy layer comprises molybdenum, niobium, and tantalum;   after forming the alloy layer, sputtering the sputtering target in a presence of oxygen to form an oxide layer over the metal layer and the alloy layer, wherein the oxide layer comprises molybdenum, niobium, tantalum, and oxygen; and   thereafter, etching away portions of the metal layer, the alloy layer, and the oxide layer.   
     
     
         37 . The method of  claim 36 , wherein the alloy layer is in direct mechanical contact with the metal layer. 
     
     
         38 . The method of  claim 37 , wherein the alloy layer is in direct mechanical contact with the oxide layer. 
     
     
         39 . The method of  claim 36 , wherein the metal layer comprises at least one of Al, Cu, Ag, Au, or Pt. 
     
     
         40 . The method of  claim 36 , wherein the portions of the metal layer and the alloy layer are etched away in a single etch step. 
     
     
         41 . The method of  claim 36 , wherein the portions of the metal layer, the alloy layer, and the oxide layer are etched away in a single etch step.

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