Chemical mechanical polishing pad conditioner and manufacturing method thereof

Abstract

A chemical mechanical polishing pad conditioner includes a bottom substrate, an intermediate substrate and a diamond film. The intermediate substrate is arranged on the bottom substrate; the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion; the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas arranged among the first polishing areas; and the first polishing areas extend along a radial direction on the intermediate substrate. The diamond film is arranged on the intermediate substrate, and the diamond film overlays the first polishing areas and the second polishing areas. The diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, and first polishing tips protruding from the first surfaces and second polishing tips protruding from the second surface are formed on the diamond film.

What is claimed is: 
     
         1 . A chemical mechanical polishing pad conditioner, comprising:
 a bottom substrate;   an intermediate substrate, arranged on the bottom substrate, wherein the intermediate substrate comprises a hollow portion and a annular portion surrounding the hollow portion, the annular portion comprises a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas disposed between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and   a diamond film, arranged on the intermediate substrate, wherein the diamond film overlays the plurality of first polishing areas and the plurality of second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the plurality of first surfaces overlay the plurality of first polishing areas, and the plurality of second surfaces overlay the plurality of second polishing areas; and   wherein a plurality of first polishing tips protruding from the plurality of first surfaces and a plurality of second polishing tips protruding from the plurality of second surfaces are formed on the diamond film, the plurality of first polishing tips have a first tip height, the second polishing tips have a second tip height, the plurality of first polishing areas have a surface roughness between 1 μm and 50 μm according to shapes of the plurality of first polishing tips, and the plurality of second polishing areas have a surface roughness between 1 μm and 50 μm according to shapes of the plurality of second polishing tips.   
     
     
         2 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the surface roughness of the plurality of first polishing areas is greater than, equal to or less than the surface roughness of the second polishing areas. 
     
     
         3 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the surface roughness of one of the plurality of first polishing areas includes at least two subsets of ranges. 
     
     
         4 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the surface roughness of one of the plurality of second polishing area includes at least two subsets of ranges. 
     
     
         5 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first tip height is greater than, equal to or less than the second tip height. 
     
     
         6 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the plurality of first polishing tips include at least two subsets of the first tip heights. 
     
     
         7 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the plurality of second polishing tips include at least two subsets of the second tip heights. 
     
     
         8 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first tip heights are between 5 μm and 300 μm. 
     
     
         9 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the second tip heights are between 5 μm and 300 μm. 
     
     
         10 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the plurality of first polishing areas and the plurality of second polishing areas are equal in height. 
     
     
         11 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein a height difference between the plurality of first polishing areas and the plurality of second polishing areas is between 1 μm and 300 μm. 
     
     
         12 . The chemical mechanical polishing pad conditioner according to  claim 1 , the shapes of the first polishing areas is trapezoid, sector, circle or polygon. 
     
     
         13 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first polishing area is formed as a bump, the diamond film overlays the plurality of first polishing areas and forms a plurality of polishing projections over the bumps, two adjacent polishing projections are separated from each other at a distance, and the distance is 1 to 5 times of a width of the bump. 
     
     
         14 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first polishing area is formed as a bump, the diamond film overlays the first polishing areas and forms a plurality of polishing projections along the bumps, and the plurality of polishing projections are formed in an arc shape with respect to a radial direction of the intermediate substrate. 
     
     
         15 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first polishing area is formed as a bump, the diamond film overlays the first polishing areas and forms a plurality of polishing projections over the bumps, the polishing projection includes a top surface and a plurality of three-dimensional geometrical structures formed on the top surface and arranged regularly or irregularly. 
     
     
         16 . The chemical mechanical polishing pad conditioner according to  claim 15 , wherein a number of the geometrical structures per square millimeter on each of the plurality of polishing projection is between 10 and 2500. 
     
     
         17 . The chemical mechanical polishing pad conditioner according to  claim 15 , wherein a first distance is provided between center points of two adjacent geometrical structures, and the first distance is 1 to 8.3 times of a width of the geometrical structures. 
     
     
         18 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the intermediate substrate is made of a conductive material, and the conductive material is selected from a group consisting of molybdenum, tungsten and tungsten carbide. 
     
     
         19 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the intermediate substrate is made of a non-conductive material, and the non-conductive material is silicon or monocrystal aluminum oxide. 
     
     
         20 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein a material of the intermediate substrate is conductive silicon carbide or non-conductive silicon carbide. 
     
     
         21 . The chemical mechanical polishing pad conditioner according to  claim 1 , further comprising an adhesive layer arranged between the bottom substrate and the intermediate substrate. 
     
     
         22 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first polishing area is formed in a single circular shape. 
     
     
         23 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the first polishing areas are formed in a plurality of circles, wherein a number of the circles is between 2 and 20. 
     
     
         24 . The chemical mechanical polishing pad conditioner according to  claim 23 , wherein the adjacent first polishing areas are staggered to one another. 
     
     
         25 . The chemical mechanical polishing pad conditioner according to  claim 1 , the bottom substrate is a planar substrate, and the intermediate substrate is arranged on the planar substrate. 
     
     
         26 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the bottom substrate is provided with a annular accommodating groove for receiving the intermediate substrate. 
     
     
         27 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the annular portion includes a plurality of separated segments spiced adjacent to each other. 
     
     
         28 . The chemical mechanical polishing pad conditioner according to  claim 27 , wherein a number of the segments is between 2 and 6. 
     
     
         29 . The chemical mechanical polishing pad conditioner according to  claim 1 , wherein the intermediate substrate is a circular substrate. 
     
     
         30 . The chemical mechanical polishing pad conditioner according to  claim 1 , further comprising a plurality of polishing units, wherein the polishing unit includes a supporting rod, a polishing particle arranged on the supporting rod, and an abrasive bonding layer used for bonding the supporting rod and the polishing particle. 
     
     
         31 . A manufacturing method of a chemical mechanical polishing pad conditioner, comprising the following steps:
 providing an intermediate substrate, wherein the intermediate substrate includes a hollow portion and an annular portion surrounding the hollow portion, the annular portion includes a plurality of first polishing areas arranged at intervals along an annular area and a plurality of second polishing areas disposed between the first polishing areas, and the first polishing areas extend along a radial direction on the intermediate substrate; and   forming a diamond film on the intermediate substrate, wherein the diamond film overlays the plurality of first polishing areas and the plurality of second polishing areas, the diamond film is provided with a plurality of first surfaces and a plurality of second surfaces, the plurality of first surfaces overlay the plurality of first polishing areas, the plurality of second surfaces overlay the plurality of second polishing areas, a plurality of first polishing tips protruding from the first surfaces and a plurality of second polishing tips protruding from the second surfaces are formed on the diamond film, the first polishing tips have a first tip height, the second polishing tips have a second tip height, the first surfaces have a surface roughness between 1 μm and 50 μm according to a shape of the first polishing tips, and the second surfaces have a surface roughness between 1 μm and 50 μm according to a shape of the second polishing tips; and arranging the intermediate substrate on a bottom substrate.