Plasma Etching Apparatus Component for Manufacturing Semiconductor Comprising Composite Sintered Body and Manufacturing Method Therefor

Abstract

Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y2O3) and 30 vol % to 70 vol % of magnesia (MgO) and having plasma resistance.The plasma etching apparatus component for manufacturing a semiconductor provided in one aspect of the present invention has excellent corrosion resistance to plasma, and may have good corrosion resistance to plasma even when the composite sintered body is sintered at a relatively low relative density. In addition, the composite sintered body has a small crystal grain size and a small increase in surface roughness after etching, so that there is an effect that contaminant particles may be reduced. Furthermore, the plasma etching apparatus component for manufacturing a semiconductor has excellent strength compared to a typical plasma-resistant material, is inexpensive, and is excellent in terms of economic feasibility and utilization.

1 . A plasma etching apparatus component for manufacturing a semiconductor, the component comprising:
 a composite sintered body including 30 vol % to 70 vol % of yttria (Y 2 O 3 ); and   30 vol % to 70 vol % of magnesia (MgO), and the component having plasma resistance.   
     
     
         2 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the composite sintered body has a crystal grain size of 100 nm to 1 μm. 
     
     
         3 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the composite sintered body has a crystal grain size of 100 nm to 500 nm. 
     
     
         4 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the composite sintered body has a relative density of 90% or higher. 
     
     
         5 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein when the composite sintered body is exposed to CF 4 /0 2  plasma of 500 W output and 100 W bias for 3 hours, the surface roughness (R a ) of the composite sintered body increases by 5 times or less. 
     
     
         6 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the composite sintered body has a surface roughness (R a ) of 2 nm or less. 
     
     
         7 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein when the composite sintered body is exposed to CF 4 /0 2  plasma of 500 W output and 100 W bias for 3 hours, the etching depth of the composite sintered body is 200 nm or less. 
     
     
         8 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the composite sintered body has a biaxial strength of 200 MPa or greater. 
     
     
         9 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the plasma etching apparatus component for manufacturing a semiconductor is formed of a bulk material of the composite sintered body. 
     
     
         10 . The plasma etching apparatus component for manufacturing a semiconductor of  claim 1 , wherein the plasma etching apparatus component for manufacturing a semiconductor is formed by coating the composite sintered body on another material. 
     
     
         11 . A method for manufacturing a plasma etching apparatus component for manufacturing a semiconductor, the method comprising:
 mixing 30 vol % to 70 vol % of yttria (Y 2 O 3 ) and 30 vol % to 70 vol % of magnesia (MgO); and   sintering the mixed yttria (Y 2 O 3 ) and magnesia (MgO).   
     
     
         12 . The method of  claim 11 , wherein the sintering of the mixed yttria (Y 2 O 3 ) and magnesia (MgO) is performed at 1000° C. to 1500° C. 
     
     
         13 . A plasma etching apparatus for manufacturing a semiconductor including the plasma etching apparatus component of  claim 1 .