Solid-state image pickup device

Abstract

A solid-state image pickup device includes a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns. The pixel array region has a voltage application pixel on an outermost circumference of the pixel array region or on the outer side with respect to an effective pixel region of the pixel array region, the voltage application pixel being one of the pixels to which a fixed voltage is normally applied. The present technology can be applied, for example, to a solid-state image pickup device and so forth.

1 . A solid-state image pickup device, comprising:
 a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns,   wherein the pixel array region has a voltage application pixel between an effective pixel and an optical black (OPB) pixel of the pixel array region, the voltage application pixel being one of the pixels to which a fixed voltage is normally applied.   
     
     
         2 . The solid-state image pickup device according to  claim 1 , wherein in the voltage application pixel, a reset transistor of the pixel is normally controlled to an on state such that the fixed voltage is normally applied. 
     
     
         3 . The solid-state image pickup device according to  claim 1 , wherein in the voltage application pixel, an electrode portion for extracting charge generated in the photoelectric conversion unit is connected to the ground without the intervention of a pixel transistor such that the fixed voltage is normally applied. 
     
     
         4 . The solid-state image pickup device according to  claim 3 , wherein the fixed voltage applied to the voltage application pixel is higher than a voltage applied to an ordinary pixel of the pixel array region. 
     
     
         5 . The solid-state image pickup device according to  claim 1 , wherein the voltage application pixel has a light shielding film on the upper side of the photoelectric conversion unit. 
     
     
         6 . The solid-state image pickup device according to  claim 1 , wherein the voltage application pixel is disposed in one row and one column on the innermost side of an OPB region of the pixel array region. 
     
     
         7 . The solid-state image pickup device according to  claim 1 , wherein the voltage application pixel is disposed in a plurality of rows and a plurality of columns of an OPB region of the pixel array region. 
     
     
         8 . The solid-state image pickup device according to  claim 1 , wherein the voltage application pixel is disposed in one row and one column on an outermost circumference of an effective pixel region of the pixel array region and a plurality of rows and a plurality of columns including one row and one column on the innermost side of an OPB region. 
     
     
         9 . The solid-state image pickup device according to  claim 1 , wherein the photoelectric conversion unit is an N-type semiconductor thin film. 
     
     
         10 . The solid-state image pickup device according to  claim 9 , wherein signal charges of the photoelectric conversion unit are pores. 
     
     
         11 . An electronic apparatus, comprising:
 an optical system;   a solid-state image pickup device, comprising:   a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns,   wherein the pixel array region has a voltage application pixel between an effective pixel and an optical black (OPB) pixel of the pixel array region, the voltage application pixel being one of the pixels to which a fixed voltage is normally applied; and   a digital signal processor that processes signals received from the solid-state image pickup device.   
     
     
         12 . The electronic apparatus according to  claim 11 , wherein in the voltage application pixel, a reset transistor of the pixel is normally controlled to an on state such that the fixed voltage is normally applied. 
     
     
         13 . The electronic apparatus according to  claim 11 , wherein in the voltage application pixel, an electrode portion for extracting charge generated in the photoelectric conversion unit is connected to the ground without the intervention of a pixel transistor such that the fixed voltage is normally applied. 
     
     
         14 . The electronic apparatus according to  claim 13 , wherein the fixed voltage applied to the voltage application pixel is higher than a voltage applied to an ordinary pixel of the pixel array region. 
     
     
         15 . The electronic apparatus according to  claim 11 , wherein the voltage application pixel has a light shielding film on the upper side of the photoelectric conversion unit. 
     
     
         16 . The electronic apparatus according to  claim 11 , wherein the voltage application pixel is disposed in one row and one column on the innermost side of an OPB region of the pixel array region. 
     
     
         17 . The electronic apparatus according to  claim 11 , wherein the voltage application pixel is disposed in a plurality of rows and a plurality of columns of an OPB region of the pixel array region. 
     
     
         18 . The electronic apparatus according to  claim 11 , wherein the voltage application pixel is disposed in one row and one column on an outermost circumference of an effective pixel region of the pixel array region and a plurality of rows and a plurality of columns including one row and one column on the innermost side of an OPB region. 
     
     
         19 . The electronic apparatus according to  claim 11 , wherein the photoelectric conversion unit is an N-type semiconductor thin film. 
     
     
         20 . The electronic apparatus according to  claim 19 , wherein signal charges of the photoelectric conversion unit are pores.