Flow Control System for a Deposition Reactor

Abstract

A system, apparatus and method are provided for processing articles. The system includes subsystems for synthesizing, pre-treating, conducting a vapor phase coating process and post-treating articles in the form of powders and solid or porous workpieces. The apparatus permits vapor phase synthesis, treatment and deposition processes to be performed with high efficiency and at high overall throughput. The methods include converting solids, liquids or gases into gaseous and solid streams that can be separated or exchanged with or without treatment and/or coating steps, and produce optimized composite articles for specific applications.

1 - 15 . (canceled) 
     
     
         16 . A method, comprising:
 providing a target quantity, mass, or unit volume of a plurality of flowable articles having a specific surface area and a gas phase environment to a first chamber of a surface treatment system via a first valve assembly fluidly coupled to a first solids phase inlet of the first chamber, the first valve assembly comprising:
 a first actuation mechanism configured to cause transport of the gas phase environment by operating a first subcomponent of the first valve assembly by one of: (i) rotation, or (ii) expansion/contraction of the first subcomponent, and 
 a second actuation mechanism configured to cause transport of the plurality of flowable articles by operating a second subcomponent of the first valve assembly by the other of (i) rotation, or (ii) expansion/contraction of the second subcomponent; 
   entering the specific surface area into at least one control system of the surface treatment system;   entering a nominal target for a quantity, a mass, or a unit volume of the plurality of flowable articles to be processed into the control system, thereby defining a first total surface area target;   providing a reactive precursor with which to treat the surfaces of the plurality of flowable articles, and entering into the control system a specific number of moles of a reactive precursor required to saturate, react with or treat the entirety of the first total surface area target using empirical or estimated process conditions, thereby defining a complete saturation quantity;   selecting a target saturation ratio, to obtain a process recipe for a batch, semi-batch, semi-continuous or continuous surface treatment process, wherein said process recipe comprises at least one target pressure level associated with said target saturation ratio; and   regulating a flow of a gas from a bypassing element counter current to a flow of the reactive precursor.   
     
     
         17 . A flow control system for a vapor deposition process comprising:
 a reaction chamber;   a precursor storage vessel;   one or more mass flow controllers to regulate the flow of precursor into the reaction chamber; and   one or more bypassing elements to regulate a flow of a gas stream countercurrent to the flow of precursor into the reaction chamber.   
     
     
         18 . The flow control system of  claim 17 , wherein each bypassing element comprises a valve, orifice, mass flow controller or pressure controller. 
     
     
         19 . The flow control system of  claim 18 , wherein each bypassing element has a controllable mechanism of actuation. 
     
     
         20 . The flow control system of  claim 19 , wherein the flow of precursor into the reaction chamber is controlled by actuation of the one or more mass flow controllers to regulate the flow of precursor into the reaction chamber, and the actuation of each bypassing element to regulate a flow of a gas stream countercurrent to the flow of precursor. 
     
     
         21 . The flow control system of  claim 20 , wherein the precursor isolation and exposure to the substrate is controlled by the length of time between the actuation steps of the one or more mass flow controllers to regulate the flow of precursor, and the actuation step of each bypassing element to regulate a flow of a gas stream countercurrent to the flow of precursor. 
     
     
         22 . A method for vapor depositing, comprising:
 providing flow control system for a vapor deposition process comprising:   a reaction chamber;   a precursor storage vessel;   one or more mass flow controllers to regulate the flow of precursor into the reaction chamber; and   one or more bypassing elements; and   regulating a flow of a gas stream from the bypassing elements countercurrent to the flow of precursor into the reaction chamber.