Semiconductor Device, Method, and Tool of Manufacture

Abstract

In an embodiment, an apparatus includes: a susceptor including substrate pockets; a gas injector disposed over the susceptor, the gas injector having first process regions, the gas injector including a first gas mixing hub and first distribution valves connecting the first gas mixing hub to the first process regions; and a controller connected to the gas injector and the susceptor, the controller being configured to: connect a first precursor material and a carrier gas to the first gas mixing hub; mix the first precursor material and the carrier gas in the first gas mixing hub to produce a first precursor gas; rotate the susceptor to rotate a first substrate disposed in one of the substrate pockets; and while rotating the susceptor, control the first distribution valves to sequentially introduce the first precursor gas at each of the first process regions as the first substrate enters each first process region.

What is claimed is: 
     
         1 . A method comprising:
 starting rotation of a susceptor, the susceptor being disposed beneath a gas injector, the susceptor comprising substrate pockets, a first substrate being disposed in a first substrate pocket and a second substrate being disposed in a second substrate pocket next to the first substrate pocket;   introducing a first precursor gas to first process regions of the gas injector, the first substrate and the second substrate being exposed to the first precursor gas as the susceptor rotates;   after introducing the first precursor gas, introducing a second precursor gas to second process regions of the gas injector, the second precursor gas being sequentially introduced to each second process region as the first substrate enters a respective second process region, wherein a supply of the second precursor gas remains continuously on between the first substrate exiting the respective second process region and the second substrate entering the respective second process region; and   after introducing the second precursor gas, continuing rotation of the susceptor to expose the first substrate and the second substrate to the first process regions and the second process regions, half-reactions of a deposition process for forming a first layer on the first substrate and a second layer on the second substrate being performed in the first process regions and the second process regions, the rotation of the susceptor being continued until the first layer comprises a first predetermined thickness and the second layer comprises a second predetermined thickness.   
     
     
         2 . The method of  claim 1  further comprising:
 eliminating the first precursor gas from the first process regions of the gas injector, the first precursor gas being sequentially eliminated from each first process region as the first substrate enters a respective first process region. 
 
     
     
         3 . The method of  claim 1 , wherein the gas injector comprises first distribution valves, and wherein introducing the first precursor gas to the first process regions comprises:
 actuating each of the first distribution valves to dispense the first precursor gas in the first process regions.   
     
     
         4 . The method of  claim 3 , wherein the gas injector comprises second distribution valves, and wherein introducing the second precursor gas to the second process regions comprises:
 determining a time span according to a position and rotation speed of the susceptor; and   actuating each of the second distribution valves to dispense the second precursor gas in the second process regions, wherein actuating comprises waiting the time span between actuation of each of the second distribution valves.   
     
     
         5 . The method of  claim 1  further comprising:
 mixing a second precursor material with a carrier gas to produce the second precursor gas; and 
 adjusting timing of introduction of the second precursor gas in response to detecting an increase in gas pressure during the mixing. 
 
     
     
         6 . The method of  claim 5  further comprising:
 diluting the second precursor gas with the carrier gas while introducing the second precursor gas to the second process regions of the gas injector. 
 
     
     
         7 . A method comprising:
 placing a first substrate on a susceptor, wherein the susceptor is disposed under a gas injector, the gas injector comprising:
 first gas ports; 
 first process regions, wherein each first gas port is located within a corresponding first process region; 
 first distribution valves connected to the first gas ports; 
 a first supply for a first precursor gas connected to the first distribution valves; 
 second gas ports; 
 second process regions, wherein each second gas port is located within a corresponding second process region; 
 second distribution valves connected to the second gas ports; and 
 a second supply for a second precursor gas connected to the second distribution valves; 
   rotating the susceptor to rotate the first substrate under the gas injector;   actuating the first distribution valves to supply the first precursor gas to the first gas ports, wherein the susceptor continues rotating while the first precursor gas is supplied to the first gas ports and the second precursor gas is not supplied to the second gas ports; and   sequentially actuating the second distribution valves to supply the second precursor gas to the second gas ports as a leading edge of the first substrate enters a corresponding second process region, and wherein the susceptor continues rotating while the first precursor gas is supplied to the first gas ports and the second precursor gas is supplied to the second gas ports.   
     
     
         8 . The method of  claim 7 , further comprising sequentially actuating the first distribution valves to eliminate a flow of the first precursor gas from the first gas ports as the leading edge of the first substrate enters a corresponding first process region, and wherein the susceptor continues rotating while the first precursor gas is not supplied to the first gas ports and the second precursor gas is supplied to the second gas ports. 
     
     
         9 . The method of  claim 7 , further comprising diluting the first precursor gas with a dilution gas and diluting the second precursor gas with the dilution gas. 
     
     
         10 . The method of  claim 7 , further comprising determining when the leading edge of the first substrate enters each corresponding second process region according to a rotation speed and an initial position of the susceptor. 
     
     
         11 . The method of  claim 7 , wherein first half-reactions of an atomic layer deposition process on the first substrate are performed when the first substrate is rotated under the first gas ports while the first precursor gas is supplied to the first gas ports, and wherein second half-reactions of the atomic layer deposition process on the first substrate are performed when the first substrate is rotated under the second gas ports while the second precursor gas is supplied to the second gas ports. 
     
     
         12 . The method of  claim 11 , further comprising determining a first quantity of revolutions of the susceptor while the first precursor gas is supplied to the first gas ports and the second precursor gas is supplied to the second gas ports according to a target thickness of the atomic layer deposition process on the first substrate. 
     
     
         13 . The method of  claim 7 , wherein the first gas ports and the second gas ports are disposed around the gas injector in an alternating pattern, and wherein the gas injector further comprises purge gas ports, each purge gas port being disposed between one first gas port and one second gas port. 
     
     
         14 . A method comprising:
 placing a first substrate on a susceptor, wherein the susceptor is disposed beneath a gas injector, the gas injector having alternating first regions and second regions;   rotating the susceptor;   dispensing a first flow of a first gas in the first regions;   while dispensing the first flow of the first gas, sequentially initiating a second flow of a second gas in the second regions as the first substrate enters each respective region of the second regions;   while dispensing the second flow of the second gas, sequentially terminating the first flow of the first gas; and   after terminating the first flow of the first gas, terminating the second flow of the second gas.   
     
     
         15 . The method of  claim 14 , wherein a first half-reaction of a deposition process for forming a first layer on the first substrate is performed during exposure to the first gas and a second half-reaction of the deposition process for forming the first layer on the first substrate is performed during exposure to the second gas. 
     
     
         16 . The method of  claim 15 , wherein the first layer comprises a dielectric material. 
     
     
         17 . The method of  claim 14 , wherein the first flow of the first gas is sequentially terminated as the first substrate enters each respective region of the first regions. 
     
     
         18 . The method of  claim 14 , further comprising:
 mixing a first material and a carrier gas in a first gas mixing hub to produce the first gas and mixing a second material and the carrier gas in a second gas mixing hub to produce the second gas.   
     
     
         19 . The method of  claim 14 , wherein the first flow of the first gas is initiated in all the first regions at a same time. 
     
     
         20 . The method of  claim 14 , wherein the second flow of the second gas is terminated in all the second regions at a same time.