Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure

Abstract

A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.

What is claimed is: 
     
         1 . A wafer fabricating system, comprising:
 a wafer chuck having a top surface, wherein a plurality of orifices are formed on the top surface;   a gas inlet port formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices;   a fluid inlet port formed in the wafer chuck;   a first arc-shaped channel and a second arc-shaped channel fluidly communicated with the fluid inlet port, wherein the first arc-shaped channel and the second arc-shaped channel are located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view;   a gas source fluidly connected to the gas inlet port; and   a fluid containing source fluidly connected to the fluid inlet port.   
     
     
         2 . The wafer fabricating system of  claim 1 , wherein the first and second arc-shape channels are concentrically arranged relative to a center of the wafer chuck. 
     
     
         3 . The wafer fabricating system of  claim 1 , wherein the first and second arc-shape channels have arc angles greater than about 180 degrees relative to a center of the wafer chuck. 
     
     
         4 . The wafer fabricating system of  claim 1 , wherein the second arc-shaped channel has a greater arc angle than the first arc-shaped channel. 
     
     
         5 . The wafer fabricating system of  claim 1 , further comprising:
 a linear connection channel connecting the first arc-shaped channel to the second arc-shaped channel.   
     
     
         6 . The wafer fabricating system of  claim 1 , further comprising:
 a third arc-shaped channel fluidly communicated with the fluid inlet port, wherein the first, second, and third arc-shaped channels are arranged in order along a direction toward a center of the wafer chuck.   
     
     
         7 . The wafer fabricating system of  claim 6 , further comprising:
 a linear connection channel connecting the second arc-shaped channel to the third arc-shaped channel.   
     
     
         8 . The wafer fabricating system of  claim 1 , wherein the fluid inlet port is located at an outside of the fan-shaped sector of the wafer chuck from the top view. 
     
     
         9 . The wafer fabricating system of  claim 1 , further comprising:
 a fluid outlet port in the wafer chuck and fluidly communicated with the first and second arc-shaped channels, the fluid outlet port being located at an outside of the fan-shaped sector of the wafer chuck.   
     
     
         10 . The wafer fabricating system of  claim 1 , further comprising:
 an inner annular groove formed on the top surface of the wafer chuck and fluidly communicated with the gas inlet port, the inner annular groove overlapping the second arc-shaped channel.   
     
     
         11 . A wafer fabricating system, comprising:
 a process chamber;   a wafer chuck in the process chamber;   a first arc-shaped cooling channel disposed in the wafer chuck;   a second arc-shaped cooling channel disposed in the wafer chuck and fluidly communicated with the first arc-shaped cooling channel, the first and second arc-shaped cooling channels being concentric about a center of the wafer chuck from a top view; and   a fluid containing source fluidly connected to the first and second arc-shaped cooling channels.   
     
     
         12 . The wafer fabricating system of  claim 11 , further comprising:
 a third arc-shaped cooling channel disposed in the wafer chuck and fluidly communicated with the first and second arc-shaped cooling channels, the first, second, and third arc-shaped cooling channels being concentric about the center of the wafer chuck from the top view.   
     
     
         13 . The wafer fabricating system of  claim 12 , further comprising:
 a first linear connection channel connecting the first arc-shaped cooling channel to the second arc-shaped cooling channel, and a second linear connection channel connecting the second arc-shaped cooling channel to the third arc-shaped cooling channel.   
     
     
         14 . The wafer fabricating system of  claim 13 , wherein the first linear connection channel has a longer length than the second linear connection channel. 
     
     
         15 . The wafer fabricating system of  claim 11 , wherein the second arc-shape cooling channel surrounds the first arc-shape cooling channel and has an arc angle greater than about 180 degrees relative to the center of the wafer chuck. 
     
     
         16 . A wafer fabricating system, comprising:
 a deposition chamber;   a shower head in the deposition chamber;   a wafer chuck in the deposition chamber and below the shower head;   a fluid guiding structure disposed in the wafer chuck, the fluid guiding structure including a plurality of arc-shaped channels, the arc-shaped channels each having an arc angle greater than about 180 degrees relative to a center of the wafer chuck from a top view; and   a fluid containing source fluidly connected to the fluid guiding structure.   
     
     
         17 . The wafer fabricating system of  claim 16 , wherein a first one of the arc-shaped channels has a greater arc angle than a second one of the arc-shaped channels. 
     
     
         18 . The wafer fabricating system of  claim 17 , further comprising:
 a linear connection channel connecting the first one of the arc-shaped channels to the second one of the arc-shaped channels.   
     
     
         19 . The wafer fabricating system of  claim 17 , further comprising:
 a gas inlet port in the wafer chuck and fluidly communicated with orifices formed on the wafer chuck, the gas inlet port located between the second and third ones of the arc-shaped channels from the top view; and   a gas source fluidly connected to the gas inlet port.   
     
     
         20 . The wafer fabricating system of  claim 16 , wherein the arc-shaped channels are at a same level height.