Low Temperature Plasma-Assisted Atomic Layer Epitaxy of Hexagonal InN Films and its Alloys with AlN

Abstract

Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.

What is claimed is: 
     
         1 . A method for growing crystalline, epitaxial indium nitride (InN) material, the method comprising:
 providing a GaN/Al 2 O 3  template and growing hexagonal InN thereon using pulsed growth plasma-assisted atomic layer epitaxy at a temperature lower than 300° C.,   wherein the obtained hexagonal InN has the same crystal structure throughout.   
     
     
         2 . The method of  claim 1 , using N 2  plasma as a nitrogen precursor. 
     
     
         3 . The method of  claim 1 , using trimethylindium as an indium precursor. 
     
     
         4 . The method of  claim 1 , wherein said hexagonal InN consists of a homogenous phase of either hexagonal InN. 
     
     
         5 . The method of  claim 1 , wherein said temperature is intentionally varied during said growing in order to control conductivity of said hexagonal InN. 
     
     
         6 . The method of  claim 1 , further comprising in situ surface treatment with atomic hydrogen, nitrogen, a mixture of hydrogen and nitrogen, and/or ammonia plasma. 
     
     
         7 . The method of  claim 1 , further comprising variation of purge time with pumping speed, thereby controlling formation of carbon impurities. 
     
     
         8 . The method of  claim 1 , wherein said temperature is lower than 200° C. 
     
     
         9 . The method of  claim 8 , using N 2  plasma as a nitrogen precursor. 
     
     
         10 . The method of  claim 8 , wherein said hexagonal InN consists of a homogenous phase of either hexagonal InN. 
     
     
         11 . The method of  claim 8 , wherein said temperature is intentionally varied during said growing in order to control conductivity of said hexagonal InN. 
     
     
         12 . The method of  claim 8 , further comprising in situ surface treatment with atomic hydrogen, nitrogen, a mixture of hydrogen and nitrogen, and/or ammonia plasma. 
     
     
         13 . The method of  claim 8 , further comprising variation of purge time with pumping speed, thereby controlling formation of carbon impurities. 
     
     
         14 . A method for growing crystalline, epitaxial indium nitride (InN) material, the method comprising:
 providing a GaN/Al 2 O 3  template and growing hexagonal InN thereon using pulsed growth plasma-assisted atomic layer epitaxy at a temperature lower than 300° C.,   wherein the pulsed growth method comprises pulsed growth of an Al x In 1-x N film at a temperature lower than 300° C. by via alternate pulses of indium or aluminum precursor and nitrogen precursor, such that x is a number greater than 0 and less than 1; and   wherein the obtained hexagonal InN has the same crystal structure throughout.   
     
     
         15 . The method of  claim 14 , using N 2  plasma and/or ammonia plasma as said nitrogen precursor. 
     
     
         16 . The method of  claim 14 , wherein said film has a homogenous phase. 
     
     
         17 . The method of  claim 14 , further comprising in situ surface treatment with atomic hydrogen, nitrogen, a mixture of hydrogen and nitrogen, and/or ammonia plasma. 
     
     
         18 . The method of  claim 14 , further comprising variation of purge time with pumping speed, thereby controlling formation of carbon impurities. 
     
     
         19 . The method of  claim 14 , further comprising the use of a trimethylaluminum as an aluminum precursor.