Large area display and method for making same

Abstract

A large area active-matrix organic light-emitting diode microdisplay and method for fabricating the same is provided which includes a panel having resolution of greater than 2,000 pixels per inch and a size of 1.4 or more inches for supporting the needs of virtual reality and augmented reality application.

1 - 10 . (canceled) 
     
     
         11 . A method of fabricating an organic light-emitting diode (OLED) display device, the method comprising:
 providing a reticle that includes a primary sub-block for forming a pixel array, each pixel of the array including a pixel circuit;   fabricating a plurality of pixel arrays on a substrate using the reticle, wherein the plurality of pixel arrays defines a backplane pixel array that includes at least one stitching boundary residing between at least two pixel arrays of the plurality of pixel arrays; and   forming an OLED emitter array on the backplane pixel array, wherein each OLED emitter of the OLED emitter array is electrically connected to a different pixel circuit of the backplane pixel array, and wherein the OLED emitter array has uniform pitch across the entire display device.   
     
     
         12 . The method of  claim 11  further comprising:
 providing the reticle such that it includes two secondary sub-blocks; 
 fabricating an interconnect region having a sub-pixel driving array on the substrate using the two secondary sub-blocks of the reticle, wherein the sub-pixel driving array includes two or more metal layers and a plurality of sub-pixel drivers; and 
 attaching the plurality of pads to the two or more metal layers by the anisotropic conductive film. 
 
     
     
         13 . The method of  claim 11  wherein the pixel array is configured in an active matrix. 
     
     
         14 . The method of  claim 11  wherein the reticle is used to define the pixel array and a plurality of wiring pads. 
     
     
         15 . The method of  claim 11  wherein the pixel array includes two transistors and an inverted organic light-emitting diode stack. 
     
     
         16 . The method of  claim 15  wherein at least one transistor is a high voltage n-channel metal-oxide silicon (NMOS) device or a lateral double-diffused metal-oxide-silicon (LDMOS) device. 
     
     
         17 . The method of  claim 11  wherein the pixel array has a resolution of at least 2,000 pixels per inch. 
     
     
         18 . The method of  claim 11  wherein the display device has a panel size of at least 35 mm per side. 
     
     
         19 . A method of fabricating an organic light-emitting diode (OLED) display device, the method comprising:
 providing a reticle that includes a primary sub-block for forming a pixel array, each pixel of the array including a pixel circuit that includes a first thin-film transistor for driving an OLED;   fabricating a plurality of pixel arrays on a substrate using the reticle, wherein the plurality of pixel arrays defines a backplane pixel array that includes at least one stitching boundary residing between at least two pixel arrays of the plurality of pixel arrays such that the pixels of the backplane pixel array are arranged with non-uniform spacing across the display device; and   forming an OLED emitter array on the backplane pixel array, wherein each OLED emitter of the OLED emitter array is electrically connected to the first thin-film transistor of a different pixel circuit of the backplane pixel array, and wherein the OLED emitter array has uniform pitch across the entire display device.   
     
     
         20 . The method of  claim 19  further comprising:
 providing the reticle such that it further includes two secondary sub-blocks; and 
 fabricating an interconnect region having a sub-pixel driving array on the substrate using the two secondary sub-blocks of the reticle, wherein the sub-pixel driving array includes two or more metal layers and a plurality of sub-pixel drivers. 
 
     
     
         21 . The method of  claim 19  wherein the backplane pixel array is formed such that it is configured in an active matrix. 
     
     
         22 . The method of  claim 19  wherein each OLED of the OLED emitter array is formed such that it is configured as an inverted organic light-emitting diode stack. 
     
     
         23 . The method of  claim 22  wherein the first thin-film transistor is formed such that it is a high voltage n-channel metal-oxide silicon (NMOS) device or a lateral double-diffused metal-oxide-silicon (LDMOS) device. 
     
     
         24 . The method of  claim 19  wherein the pixel array has a resolution of at least 2,000 pixels per inch. 
     
     
         25 . The method of  claim 19  wherein the display device has a panel size of at least 35 mm per side.