Hydrogen isotope separation systems

Abstract

Methods and systems for the separation of hydrogen isotopes from one another are described. Methods include utilization of a hydrogen isotope selective separation membrane that includes a hydrogen isotope selective layer (e.g., graphene) and a hydrogen ion conductive supporting layer. An electronic driving force encourages passage of isotopes selectively across the membrane at an elevated separation temperature to enrich the product in a selected hydrogen isotope.

What is claimed is: 
     
         1 . A system for separation of hydrogen isotopes from one another, the system comprising:
 a separation device, the separation device including
 a feed chamber; 
 a product chamber; and 
 a separation membrane forming a gas-tight seal between the feed chamber and the product chamber, the separation membrane including a hydrogen isotope selective layer and a hydrogen ion conductive layer, the hydrogen isotope selective layer comprising an crystalline material, the hydrogen ion conductive layer comprising a hydrogen ion conductive ceramic, the separation membrane including a first side and an opposite second side, the first side facing the feed chamber and the second side facing the product chamber; 
   an electric circuit in electrical communication with the separation membrane and configured to apply a voltage between the first side and the second side of the separation membrane; and   a heater configured to increase the temperature of the separation membrane.   
     
     
         2 . The system of  claim 1 , wherein the hydrogen isotope selective layer comprises from 1 to about 5 atomic layers of the crystalline material. 
     
     
         3 . The system of  claim 2 , wherein the atomic layers of the hydrogen isotope selective layer comprise atoms in a hexagonal pattern. 
     
     
         4 . The system of  claim 1 , wherein the crystalline material comprises graphene, hexagonal boron nitride, or a transition metal chalcogenide. 
     
     
         5 . The system of  claim 1 , wherein the hydrogen ion conductive layer comprises a perovskite type ceramic. 
     
     
         6 . The system of  claim 5 , wherein the perovskite type ceramic comprises BaZrO 3 , BaCeO 3 , SrCeO 3 , CaZrO 3 , SrZRO 3 , or BaCe 0.7 Zr 0.1 Y 0.1 Yb 0.1 O 3−δ . 
     
     
         7 . The system of  claim 5 , wherein the perovskite type ceramic has the composition as follows:
   A 1−x−α <P x B 1−y Q y O 3−δ     
       in which
 A is a bivalent cation, 
 P is an A-site dopant, 
 B is a tetravalent cation, 
 Q is a B-site dopant, 
 α represents the A-site non-stoichiometry (deficiency), and 
 δ is an oxygen deficiency. 
 
     
     
         8 . The system of  claim 7 , wherein A is Ba, Sr, Ca, Mg or combinations thereof and P is a cation. 
     
     
         9 . The system of  claim 8 , wherein P belongs to the lanthanide series. 
     
     
         9 . The system of  claim 9 , wherein P is Pr, Sm, or Er. 
     
     
         10 . The system of  claim 7 , wherein B is an element in Group IV of the period table or is an element in the lanthanide series of the periodic table or a combination thereof. 
     
     
         11 . The system of  claim 10 , wherein B is Ti, Zr, Ce, La, or a combination thereof. 
     
     
         12 . The system of  claim 7 , wherein Q is an element in Group III of the period table or an element in the lanthanide series of the periodic table, or a combination thereof. 
     
     
         13 . The system of  claim 12 , wherein Q is Sc, Y, Eu, Nd, Gd, Yb, or a combination thereof. 
     
     
         14 . The system of  claim 5 , wherein the perovskite ceramic comprises BaZr 0.25 In 0.75 O 3−δ , BaZr 0.9 Y 0.1 O 3 , BaZr 0.85 Y 0.15 O 3 , Ba 0.97 Zr 0.77 Y 0.19 Zn 0.04 O 3 , BaZr 0.8 Y 0.2 O 3 , BaZr 0.5 In 0.5 O 3−δ , BaZr 0.1 Ce 0.7 Y 0.2 O 3−δ , BaCe 0.9 Gd 0.1 O 3 , BaCe 0.8 Zr 0.1 Gd 0.1 O 3 , BaCe 0.45 Zr 0.45 Sc 0.1 O 3 , BaCe 0.65 Zr 0.20 Y 0.15 O 3−δ , BaCe 0.9 Y 0.1 O 2.95 , BaCe 0.8 Y 0.2−x Nd x O 3−δ  (x=0-0.15), Ba 0.5 Sr 0.5 Ce 0.6 Zr 0.2 Gd 0.1 Y 0.1 O 3−δ , BaSn 0.5 In 0.5 O 2.75 , Ba 0.9 La 0.1 Sn 0.5 In 0.5 O 2.8 , Ba 0.9 Gd 0.1 Sn 0.5 In 0.5 O 2.8 , SrCe 0.95 Yb 0.05 O 3 , Sr 3 CaZr 0.5 Ta 1.5 O 8.75 , CaZrO 3 , SrZrO 3 , BaTiO 3 , or Ce 0.9 Gd 0.1 O 2−δ . 
     
     
         15 . The system of  claim 1 , further comprising a second separation membrane forming a gas-tight seal between the product chamber and a third chamber, a first side of the second separation membrane facing the product chamber and a second side of the second separation membrane facing the third chamber. 
     
     
         16 . The system of  claim 1 , further comprising a gas flow line to the sample chamber. 
     
     
         17 . The system of  claim 1 , the hydrogen isotope selective layer further comprising a metal selected from Groups 8 to 10 of the periodic table. 
     
     
         18 . The system of  claim 17 , wherein the metal is present in a discontinuous fashion on a surface of the hydrogen isotope selective layer. 
     
     
         19 . The system of  claim 1 , wherein the crystalline material comprises graphene, the system further comprising an electrode, the electrode including the graphene of the crystalline material.