Surface Treatment Compositions and Methods

Abstract

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate.

1 - 24 . (canceled) 
     
     
         25 . A method of treating a substrate, comprising:
 a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof, wherein the sublimating material comprises a sublimating compound and the sublimating compound is a surface modification agent;   b) maintaining the sublimating material on the surface for a time sufficient to modify the surface;   c) solidifying the sublimating material on the surface; and   d) removing by sublimation the sublimating material disposed on the surface.   
     
     
         26 . The method of  claim 25 , wherein the sublimating compound has a melting point of from about −20° C. to about 60° C. and a vapor pressure of at least about 1 mm Hg at 25° C. 
     
     
         27 . The method of  claim 25 , wherein the sublimating compound has a melting point of from about 0° C. to about 20° C. 
     
     
         28 . The method of  claim 25 , wherein the sublimating compound has a surface tension of at most about 65 mN/m at 25° C. 
     
     
         29 . The method of  claim 25 , wherein the sublimating compound has a viscosity of at most about 5 centistokes at 25° C. 
     
     
         30 . The method of  claim 25 , wherein the sublimating compound is octamethylcyclotetrasiloxane, trimethylsilanol, t-hexyldimethylcholorosilane, 1,3-bis(heptadecafluoro-1,1,2,2-tetrahydrodecyl)tetramethyldisiloxane, triisopropyldimethylaminosilane, N-(trimethylsilyl)acetamide, or tris(trimethylsilyl)phosphate. 
     
     
         31 . The method of  claim 25 , wherein the sublimating material further comprises a catalyst. 
     
     
         32 . The method of  claim 31 , wherein the catalyst is triflic acid, triflic anhydride, methanesulfonic acid, acetic acid, or acetic anhydride. 
     
     
         33 . The method of  claim 31 , wherein the catalyst is in an amount of from about 0.1% by weight to about 10% by weight of the sublimating material. 
     
     
         34 . The method of  claim 25 , wherein the sublimating material further comprises a solvent. 
     
     
         35 . The method of  claim 34 , further comprising a solvent evaporation step. 
     
     
         36 . The method of  claim 34 , wherein the solvent is hexyl acetate, n-butyl acetate, t-butyl acetate, propylene glycol methyl ether acetate (PGMEA), or anisole. 
     
     
         37 . The method of  claim 25 , wherein the surface comprises SiO 2 , SiN, TiN, SiOC, SiON, Si, SiGe, Ge, or W. 
     
     
         38 . A sublimating material, comprising:
 a sublimating compound in an amount of from about 40% by weight to about 99.5% by weight of the sublimating material; and   a surface modification agent in an amount of from about 0.5% by weight to about 10% by weight of the sublimating material.   
     
     
         39 . A sublimating material, comprising:
 a sublimating compound in an amount of from about 40% by weight to about 99.5% by weight of the sublimating material;   a catalyst in an amount of from about 0.1% by weight to about 10% by weight of the sublimating material; and   a solvent in an amount of from about 0.1% by weight to about 50% by weight of the sublimating material.   
     
     
         40 . A sublimating material, comprising:
 a sublimating compound in an amount of from about 40% by weight to about 99.5% by weight of the sublimating material, wherein the sublimating compound is octamethylcyclotetrasiloxane, trimethylsilanol, t-hexyldimethylcholorosilane, 1,3-bis(heptadecafluoro-1,1,2,2-tetrahydrodecyl)tetramethyldisiloxane, triisopropyldimethylaminosilane, N-(trimethylsilyl)acetamide, or tris(trimethylsilyl)phosphate; and   a solvent in an amount of from about 0.1% by weight to about 50% by weight of the sublimating material.