Semiconductor device, imaging device, and manufacturing apparatus

Abstract

Provided is a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a through hole that penetrates a semiconductor substrate;   
       a bump;
 an electrode in the through hole, wherein the electrode is connected to the bump; 
 a wiring connected to a lower surface of the electrode; 
 a barrier metal film around the electrode; 
 a space around the barrier metal film; and 
 a first insulating film between the semiconductor substrate and the space, wherein the first insulating film is in contact with the semiconductor substrate. 
 
     
     
         2 . The semiconductor device according to  claim 1 , wherein the barrier metal film includes one of tantalum (Ta), titanium (Ti), tungsten (W), or zirconium (Zr). 
     
     
         3 . The semiconductor device according to  claim 1 , further comprising a second insulating film on the semiconductor substrate, wherein the through hole penetrates the second insulating film. 
     
     
         4 . The semiconductor device according to  claim 1 , further comprising:
 a second insulating film; and   a pre-metal dielectric between the semiconductor substrate and the second insulating film.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein the electrode penetrates the pre-metal dielectric. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the electrode and the wiring include the same material. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the wiring is in contact with the bump. 
     
     
         8 . The semiconductor device according to  claim 1 , further comprising an aluminium pad connected to an upper surface of the electrode. 
     
     
         9 . The semiconductor device according to  claim 1 , wherein the electrode, the space, the barrier metal film, and the first insulating film are on the semiconductor substrate. 
     
     
         10 . A manufacturing apparatus to manufacture a semiconductor device, the semiconductor device including:
 a through hole that penetrates a semiconductor substrate;   
       a bump;
 an electrode in the through hole, wherein the electrode is connected to the bump; 
 an aluminium pad connected to an upper surface of the electrode; 
 a wiring connected to a lower surface of the electrode; 
 a barrier metal film around the electrode; 
 a space around the barrier metal film; and 
 a first insulating film between the semiconductor substrate and the space, wherein the first insulating film is in contact with the semiconductor substrate. 
 
     
     
         11 . The semiconductor device according to  claim 10 , further comprising:
 a second insulating film; and   a pre-metal dielectric between the semiconductor substrate and the second insulating film.   
     
     
         12 . The semiconductor device according to  claim 11 , wherein the electrode penetrates the pre-metal dielectric. 
     
     
         13 . The semiconductor device according to  claim 10 , wherein the wiring is in contact with the bump. 
     
     
         14 . The semiconductor device according to  claim 10 , wherein the electrode, the space, the barrier metal film, and the first insulating film are on the semiconductor substrate. 
     
     
         15 . The semiconductor device according to  claim 10 , wherein the barrier metal film includes one of tantalum (Ta), titanium (Ti), tungsten (W), or zirconium (Zr). 
     
     
         16 . The semiconductor device according to  claim 10 , further comprising a second insulating film on the semiconductor substrate, wherein the through hole penetrates the second insulating film.