Semiconductor deposition method and semiconductor deposition system

Abstract

Disclosed a semiconductor deposition method and a semiconductor deposition system. The semiconductor deposition method includes providing a deposition apparatus, the deposition apparatus includes a spraying head for deposition; detecting whether a thickness defect exists in a deposited thin film or not, the thickness defect includes a thickness difference of the deposited thin film; acquiring at least one position where the thickness defect exists; and adjusting a structure of an air outlet panel in the spraying head based on the position of the thickness defect so as to adjust distances between air outlet holes in the air outlet panel and the deposited thin film.

1 . A semiconductor deposition method, comprising:
 providing a deposition apparatus, the deposition apparatus comprises a spraying head for deposition;   detecting whether a thickness defect exists in a deposited thin film or not, the thickness defect comprises a thickness difference of the deposited thin film;   acquiring at least one position where the thickness defect exists; and   adjusting a structure of an air outlet panel in the spraying head based on the position of the thickness defect so as to adjust distances between air outlet holes in the air outlet panel and the deposited thin film.   
     
     
         2 . The semiconductor deposition method according to  claim 1 , wherein the detecting whether the thickness defect exists in the deposited thin film or not comprises:
 detecting thicknesses of to-be-detected areas in the deposited thin film; and   judging whether the thickness defect exists in the deposited thin film or not based on the thicknesses of the to-be-detected areas.   
     
     
         3 . The semiconductor deposition method according to  claim 2 , wherein the judging whether the thickness defect exists in the deposited thin film or not based on the thicknesses of the to-be-detected areas comprises:
 the to-be-detected areas comprises a first detection area which is a first distance away from a center position of the deposited thin film and a second detection area which is a second distance away from the center position of the deposited thin film, wherein the second distance is larger than the first distance; and   judging whether the thickness defect exists in the deposited thin film or not based on the thicknesses of the deposited thin film detected in the first detection area and the second detection area.   
     
     
         4 . The semiconductor deposition method according to  claim 3 , wherein the first detection area is disposed at the center position of the deposited thin film, and the second detection area is disposed at an edge position of the deposited thin film. 
     
     
         5 . The semiconductor deposition method according to  claim 1 , wherein the adjusting the structure of the air outlet panel in the spraying head so as to adjust the distances between the air outlet holes in the air outlet panel and the deposited thin film comprises:
 adjusting a middle portion of the air outlet panel to move towards a direction close to or away from the deposited thin film.   
     
     
         6 . The semiconductor deposition method according to  claim 1 , wherein the detecting whether the thickness defect exists in the deposited thin film or not comprises:
 detecting a thickness of each position in the deposited thin film to obtain a thickness distribution diagram of the deposited thin film; and   judging whether the thickness defect exists in the deposited thin film or not based on the thickness distribution diagram.   
     
     
         7 . The semiconductor deposition method according to  claim 6 , wherein the detecting the thickness of each position in the deposited thin film to obtain the thickness distribution diagram of the deposited thin film comprises:
 detecting thicknesses of positions, corresponding to the air outlet holes, in the deposited thin film; and   acquiring the thickness distribution diagram based on the thicknesses of the positions, corresponding to the air outlet holes, in the deposited thin film and distribution of the air outlet holes.   
     
     
         8 . The semiconductor deposition method according to  claim 7 , further comprising: adjusting the structure of the air outlet panel in the spraying head to adjust the air outlet holes in the air outlet panel to ventilate or not to ventilate. 
     
     
         9 . The semiconductor deposition method according to  claim 1 , wherein the adjusting the structure of the air outlet panel in the spraying head comprises: adjusting at least one air outlet hole corresponding to the at least one position of the thickness defect to be close to or away from the deposited thin film. 
     
     
         10 . A semiconductor deposition system, wherein the semiconductor deposition system comprises a deposition apparatus and a control system;
 the deposition apparatus comprises a spraying head, and a bearing platform configured to mount a semiconductor substrate;   the control system comprises a detection module and a control module;   the detection module is disposed on the deposition apparatus, and is configured to detect whether a thickness defect exists in a deposited thin film on the semiconductor substrate or not; and   the control module is connected to the spraying head, and is configured to adjust a structure of an air outlet panel in the spraying head so as to adjust distances between air outlet holes in the air outlet panel and the deposited thin film.   
     
     
         11 . The semiconductor deposition system according to  claim 10 , wherein the deposition apparatus further comprises a driving assembly;
 the control module is connected to the spraying head through the driving assembly; and   the control module is configured to transmit a control signal to the driving assembly, and the driving assembly adjusts the structure of the air outlet panel in the spraying head based on the control signal, so as to adjust the distances between the air outlet holes in the air outlet panel and the deposited thin film.   
     
     
         12 . The semiconductor deposition system according to  claim 11 , wherein the driving assembly is realized through a piezoelectric ceramic driver. 
     
     
         13 . The semiconductor deposition system according to  claim 11 , wherein the deposition apparatus further comprises a blocking module connected to the driving assembly, and the driving assembly is configured to control the blocking module to block the air outlet holes in the spraying head or not based on the control signal.