Image sensor

Abstract

An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

1 . An image sensor comprising an array of readout circuits in non-organic technology and photodiodes made of organic materials. 
     
     
         2 . The sensor according to  claim 1 , wherein the readout circuits are made in CMOS technology. 
     
     
         3 . The sensor according to  claim 1 , wherein each photodiode is separated from the next photodiodes by spacers made of an electrically-insulating material. 
     
     
         4 . The sensor according to  claim 3 , wherein the spacers are made of a transparent material. 
     
     
         5 . The sensor according to  claim 3 , wherein the spacers are opaque to light. 
     
     
         6 . The sensor according to  claim 3 , wherein the spacers absorb light. 
     
     
         7 . The sensor according to  claim 1 , wherein each photodiode comprises a first electrode having the size of a pixel or sub-pixel of the associated readout circuit. 
     
     
         8 . The sensor according to  claim 7 , wherein the first electrode is connected to a gate of a first transistor of the readout circuit. 
     
     
         9 . The sensor according to  claim 7 , wherein the first electrode is coupled to a gate of a first transistor of the readout circuit via one or a plurality of additional transistors. 
     
     
         10 . The sensor according to  claim 1 , wherein an electrode of the photodiodes is common to a plurality of readout circuits. 
     
     
         11 . The sensor according to  claim 10 , wherein the electrode is covered with a translucent protection layer. 
     
     
         12 . The sensor according to  claim 10 , wherein the electrode is formed of a transparent organic conductive layer. 
     
     
         13 . The sensor according to  claim 7 , wherein each pixel or sub-pixel is inscribed within a square having a side length smaller than 50 μm. 
     
     
         14 . The sensor according to  claim 7 , wherein the pixels or sub-pixels are laterally spaced apart by less than 5 μm.