Method of manufacturing electronic device

Abstract

A method of manufacturing an electronic device includes providing a substrate, forming a solder on the substrate, and bonding a diode to the substrate through the solder, wherein the solder is formed by stacking a plurality of first conductive layers and a plurality of second conductive layers alternately, and the plurality of first conductive layers and the plurality of second conductive layers include different materials.

What is claimed is: 
     
         1 . A method of manufacturing an electronic device, comprising: 
 providing a substrate;   forming a solder on the substrate; and   bonding a diode to the substrate through the solder;   wherein the solder is formed by stacking a plurality of first conductive layers and a plurality of second conductive layers alternately; and   wherein the plurality of first conductive layers and the plurality of second conductive layers include different materials.   
     
     
         2 . The method of manufacturing an electronic device of  claim 1 , comprising:
 forming a conductive structure on the substrate, wherein the conductive structure and the solder are mixed to form a solder alloy after a bonding process.   
     
     
         3 . The method of manufacturing an electronic device of  claim 2 , wherein the solder alloy includes gold, tin and a metal element M. 
     
     
         4 . The method of manufacturing an electronic device of  claim 3 , wherein the metal element M is indium or bismuth, and an atomic percentage of tin in sum of the tin and the metal element M is in a range from 60% to 90% in the solder alloy. 
     
     
         5 . The method of manufacturing an electronic device of  claim 2 , wherein a portion of the solder does not form the solder alloy, and a portion of the conductive structure does not form the solder alloy. 
     
     
         6 . The method of manufacturing an electronic device of  claim 5 , wherein the portion of the solder not forming the solder alloy is a layer, the portion of the conductive structure not forming the solder alloy is a first layer, and a thickness of the layer and a thickness of the first layer are different. 
     
     
         7 . A method of manufacturing an electronic device, comprising: 
 providing a diode;   forming a solder on the diode; and   bonding the diode to a substrate through the solder;   wherein the solder is formed by stacking a plurality of first conductive layers and a plurality of second conductive layers alternately; and   wherein the plurality of first conductive layers and the plurality of second conductive layers include different materials.   
     
     
         8 . The method of manufacturing an electronic device of  claim 7 , comprising:
 forming a conductive structure on the substrate, wherein the conductive structure and the solder are mixed to form a solder alloy after a bonding process.   
     
     
         9 . The method of manufacturing an electronic device of  claim 8 , wherein the solder alloy includes gold, tin and a metal element M. 
     
     
         10 . The method of manufacturing an electronic device of  claim 9 , wherein the metal element M is indium or bismuth, and an atomic percentage of tin in sum of the tin and the metal element M is in a range from 60% to 90% in the solder alloy.