US2023087942A1PendingUtilityA1

Display panel and method of fabricating the same

Assignee: SAMSUNG DISPLAY CO LTDPriority: Oct 13, 2017Filed: Nov 29, 2022Published: Mar 23, 2023
Est. expiryOct 13, 2037(~11.2 yrs left)· nominal 20-yr term from priority
H10D 86/431H10K 50/84H10K 59/87H10K 59/1213H10D 86/411H10D 30/6755H10D 86/471H10D 86/451H10D 86/441H10D 86/423H10D 86/0212H10D 86/60G09G 3/3225Y02E10/549H10K 59/124H10K 59/126H10K 59/179H10K 59/122H10K 59/131H01L 51/5237H01L 27/3246H01L 27/3262H01L 27/3258H01L 27/3272H01L 27/1218H01L 27/3288H01L 27/3276H01L 27/1248H01L 27/1251H01L 27/1225H01L 27/124H01L 27/1262H10D 30/6743H10K 77/111G09F 9/301H10K 59/12H10K 59/1201
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Claims

Abstract

A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A display panel, comprising:
 a base layer including a first region and a second region that is bent with respect to the first region;   at least one inorganic layer overlapping both the first region and the second region and disposed on the base layer;   a first thin-film transistor disposed on the at least one inorganic layer and including a silicon semiconductor pattern overlapping the first region;   a second thin-film transistor disposed on the at least one inorganic layer and including an oxide semiconductor pattern overlapping the first region, wherein the oxide semiconductor pattern is disposed on a layer different from the silicon semiconductor pattern;   a plurality of insulating layers overlapping both the first region and the second region;   a signal line electrically connected to the second thin-film transistor;   an organic layer overlapping both the first region; and   a luminescent element disposed on the organic layer and overlapping the first region, and   wherein an opening is defined in the at least one inorganic layer and the plurality of insulation layers and the opening is positioned in the second region.

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