Plasma dispersion effect based super-resolved imaging

Abstract

Disclosed herein is a super resolution imaging method and system for obtaining an image in a crystal material and/or device.

1 . A super resolution imaging method for obtaining an image in a crystal, the method comprising:
 i. providing a crystal;   ii. projecting into a surface of said crystal:
 a pump beam comprising a Gaussian beam or a doughnut beam, thereby creating a free charge carrier (FCC) density pattern; and 
 a collinear probe beam, thereby controlling the lateral and temporal transmission of said probe beam. 
   
     
     
         2 . The method of  claim 1 , wherein said crystal is a semiconductor. 
     
     
         3 . The method of  claim 1 , wherein said probe beam comprises a Gaussian beam; and wherein said pump beam is projected at 20000 picoseconds (ps) to 20 femtosecond (fs) pulse width. 
     
     
         4 . The method of  claim 1 , wherein said probe beam is projected at 20000 ps to 20 fs pulse width. 
     
     
         5 . The method of  claim 1 , wherein said pump beam and said probe beam are pulsed at a repetition rate between 1 pulse and 500,000 pulses per second. 
     
     
         6 . The method of  claim 1 , wherein said crystal is between 1 micrometer (μm) to 500 μm thick. 
     
     
         7 . The method of  claim 1 , wherein said doughnut beam comprises an inner diameter ranging from 0.1 μm to 40 μm and a doughnut width ranging from 0.1 μm to 10 μm. 
     
     
         8 . The method of  claim 1 , wherein the point spread function (PSF) diameter of said pump beam is calculated according to the resolution (r) formula: r=λ/2NA. 
     
     
         9 . The method of  claim 1 , wherein the point spread function (PSF) diameter of said pump beam is in the range of 0.1 μm to 40 μm. 
     
     
         10 . The method of  claim 1 , wherein the wavelength (λ) ratio of said probe beam to said pump beam is between 4:1 and 1:1. 
     
     
         11 . The method of  claim 1 , wherein the wavelength (λ) of said probe beam is between 1000 nanometer (nm) and 2000 nm. 
     
     
         12 . The method of  claim 1 , wherein the wavelength (λ) of said pump beam is between 500 nm and 1000 nm. 
     
     
         13 . The method of  claim 2 , wherein said semiconductor is selected from the group consisting of silicon, germanium, gallium arsenide, cadmium, selenide, or any combination thereof. 
     
     
         14 . The method of  claim 1 , characterized by a penetration depth of said pump beam in said crystal between 1 nm and 100 μm. 
     
     
         15 . The method of  claim 1 , characterized by an absorption coefficient (α) in the range of 5 cm −1  to 10 3  cm −1 . 
     
     
         16 . The method of  claim 1 , wherein said free charge carrier (FCC) density pattern is controlled by a vortex plate with a topological order of 0 to 8.