Atmospheric cold plasma jet coating and surface treatment

Abstract

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

1 - 19 . (canceled) 
     
     
         20 . A system for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface, the system comprising:
 a microwave generator electronics stage;   a microwave applicator stage including a cavity resonator structure, wherein the cavity resonator structure comprises:
 an outer conductor, 
 an inner conductor, and 
 a resonator cavity interposed between the outer conductor and the inner conductor; and 
   a multi-component flow assembly comprising:
 a zonal flow nozzle providing a functional process gas, and 
 a source material flow source configured to provide a flow of the source material; 
   wherein the source material flow source and zonal flow nozzle are physically configured to facilitate a reaction between the flow of the source material emitted from the source material flow source and the functional process gas within a plasma region generated by the microwave generator electronics stage and the microwave applicator stage,   wherein the plasma region comprises a plasma generation zone,   wherein the plasma region is between an emission position of the source material flow source and the receiving surface, and   wherein the outer conductor extends beyond the inner conductor to create a high electric field region at a cutoff location located within the cavity resonator structure,   thereby enabling generating, at the plasma generation zone, a plasma proximal to an injection point of the source material, and   thereby facilitating consumption of the source material.   
     
     
         21 . The system of  claim 20  wherein the multi-component flow assembly further comprises a laminar flow nozzle providing a shield gas, and wherein the laminar flow nozzle is configured to emit the shield gas in a cross-sectional pattern forming a perimeter around the functional process gas expelled from the zonal flow nozzle. 
     
     
         22 . The system of  claim 21  wherein the zonal flow nozzle is configured to emit the functional process gas in a cross-sectional pattern forming a perimeter around the source material expelled from the source material flow source. 
     
     
         23 . The system of  claim 22  wherein the source material flow source has a circular cross-section outlet, the zonal flow nozzle has a ring-shaped cross-section outlet concentric with the circular cross-section outlet. 
     
     
         24 . The system of  claim 20  wherein the multi-component flow assembly further comprises a laminar flow nozzle providing a shield gas, and wherein the laminar flow nozzle, zonal flow nozzle and the source material flow source are each configured with gas flow outlets that are generally linear; and wherein the zonal flow nozzle comprises at least two linear functional process gas flow outlets positioned to expel the functional process gas at opposite sides of the source material flow source. 
     
     
         25 . The system of  claim 24  wherein the laminar flow nozzle comprises at least two linear shield gas flow outlets positioned to expel the shield gas outside the at least two linear functional process gas flow outlets. 
     
     
         26 . The system of  claim 21  wherein the laminar flow nozzle comprises at least two linear shield gas flow outlets positioned to expel a shield gas surrounding a functional process gas flow of the zonal flow nozzle. 
     
     
         27 . The system of  claim 20  wherein the zonal flow nozzle comprises bundled capillary tubes that receive the functional process gas from a functional process gas plenum. 
     
     
         28 . The system of  claim 20  wherein the cavity resonator structure operates in a cutoff mode to generate a high electric field for generating, at the plasma generation zone, a plasma proximal to a precursor injection point, thereby supplying ions that facilitate direct pulsed sputtering of material off a feedstock electrode. 
     
     
         29 . The system of  claim 20  wherein the cavity resonator structure is configured to generate a cold plasma jet while operating in a frequency of 500 MHz to 2.5 GHz. 
     
     
         30 . The system of  claim 20  wherein an insulating material is interposed between the outer conductor and the inner conductor, wherein the insulating material facilitates active biasing, thereby facilitating sputtering using a feedstock and/or elevating an electrical potential of ions within the plasma region. 
     
     
         31 . The system of  claim 20  wherein the microwave generator electronics operate in a continuous wave mode of operation to drive the cavity resonator structure. 
     
     
         32 . The system of  claim 20  wherein the microwave generator electronics operate in a pulsed mode of operation to drive the cavity resonator structure. 
     
     
         33 . The system of  claim 20  wherein the microwave generator electronics comprise solid-state amplifiers that support frequency tuning that facilitates impedance matching during operation to maintain a desired plasma load. 
     
     
         34 . The system of  claim 20  wherein a pulsed positive bias is applied to the plasma region provide ion energy to the process/carrier gas flow substrate to facilitate the treating of the receiving surface. 
     
     
         35 . The system of  claim 20  wherein a pulsed negative bias is applied to the source material flow source to achieve sputtering of source material. 
     
     
         36 . The system of  claim 21  wherein the shield gas forms an isolation barrier between outside contaminants and the plasma region. 
     
     
         37 . The system of  claim 20  wherein the functional process gas after passing through the plasma region cleans and functionalizes the receiving surface. 
     
     
         38 . The system of  claim 20  wherein the functional process gas, after passing through the plasma region, generates reactive species that alter a composition of the receiving surface. 
     
     
         39 . The system of  claim 20  wherein the particles of source material, after passing through the plasma region, are incorporated onto the receiving surface.