Module with silicon layer and perovskite layer and methods for making the same

Abstract

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX 3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX 3 and silicon layer are arranged between the first substrate and the glass substrate.

What is claimed is: 
     
         1 . A device, comprising:
 a first substrate;   a silicon layer supported by the first substrate;   an active glass layer comprising a layer comprising a crystal material with a chemical formula ABX 3  supported by a glass substrate,   wherein the active glass layer is stacked on the first substrate such that the layer including a crystal material with a chemical formula ABX 3  and the silicon layer are arranged between the first substrate and the glass substrate.   
     
     
         2 . A method for manufacturing a tandem solar module, comprising:
 (a) fabricating an active glass layer, comprising:
 (i) providing a first substrate comprising a glass layer supporting a transparent conducting layer and a hole transport layer on a first side of the glass layer; 
 (ii) applying a perovskite precursor to the first side of the substrate; and 
 (iii) annealing the perovskite precursor to form a perovskite layer; and 
   (b) attaching the active glass layer to a silicon panel to form the tandem solar module, the silicon panel comprising a second substrate and a silicon layer supported by the second substrate,   wherein the perovskite layer and the silicon layer are arranged in the tandem solar cell between the glass layer and the second substrate.   
     
     
         3 . The method of  claim 2 , wherein the perovskite layer has a first band gap and the silicon layer has a second band gap different from the first band gap. 
     
     
         4 . The method of  claim 2 , wherein the perovskite layer has a band gap in a range from 1.6 eV to 2.0 eV. 
     
     
         5 . The method of  claim 2 , wherein the perovskite layer comprises a compound having the chemical formula MA n1 FA n2 Cs n3 PbX 3 , wherein MA is methylammonium, FA is formamidinium, X is selected from the group consisting of fluorine, chlorine, bromine, and iodine, n1, n2, and n3 are independently greater than 0 and less than 1, and n1+n2+n3=1. 
     
     
         6 . The method of  claim 5 , wherein n1 is from about 0.001 to 0.99, n2 is from about 0.001 to 0.99, and n3 is from about 0.005 to 0.5. 
     
     
         7 . The method of  claim 4 , wherein the perovskite layer comprises CH 3 NH 3 PbX 3  or H 2 NCHNH 2 PbX 3 . 
     
     
         8 . The method of  claim 2 , wherein fabricating the active glass layer further comprises applying an electron transport layer to the perovskite layer. 
     
     
         9 . The method of  claim 8 , wherein the electron transport layer comprises a compound selected from the group consisting of titanium oxide, zinc oxide, tin oxide, tungsten oxide, indium oxide, niobium oxide, iron oxide, cerium oxide, strontium titanium oxide, zinc tin oxide, barium tin oxide, cadmium selenide, indium sulfide, lead iodide, phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene-2,5-diyl) (P3HT), lithium fluoride, and fullerenes. 
     
     
         10 . The method of  claim 8 , further comprising forming a second transparent conducting layer on the electron transport layer. 
     
     
         11 . The method of  claim 10 , wherein the second transparent conducting layer is formed using physical vapor deposition. 
     
     
         12 . The method of  claim 10 , further comprising forming one or more busbars on the second transparent conducting layer. 
     
     
         13 . The method of  claim 10 , wherein fabricating the active glass layer further comprises applying an encapsulant to the second transparent conducting layer. 
     
     
         14 . The method of  claim 13 , wherein the encapsulant comprises a polymer or a wax. 
     
     
         15 . The method of  claim 13 , wherein the encapsulant is applied to a surface of the second transparent conducting layer and to edges of one or more of the layer between the glass layer and the second transparent conducting layer. 
     
     
         16 . The method of  claim 2 , wherein attaching the active glass layer to the silicon panel comprises laminating the active glass layer to the silicon panel. 
     
     
         17 . The method of  claim 16 , wherein the lamination is performed at a temperature in a range from 100° C. to 150° C. 
     
     
         18 . The method of  claim 2 , wherein the active glass layer comprises a layer of polydimethyl siloxane (PDMS). 
     
     
         19 . The method of  claim 2 , wherein applying the perovskite precursor comprises coating a layer of the perovskite precursor on the first side of the substrate. 
     
     
         20 . The method of  claim 19 , wherein the coating comprises blade-coating, slot-die coating, spin coating, dip coating, doctor blading, drop casting, or centrifugal casting the perovskite precursor on the first side of the substrate.