Semiconductor device and method of manufacturing thereof

Abstract

A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device comprising multiple encapsulating layers and multiple signal distribution structures, and a method of manufacturing thereof.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a first signal distribution structure having a first side and a second side that is opposite the first side of the first signal distribution structure, wherein the first signal distribution structure comprises a dielectric layer and a conductive layer;   a first electronic component coupled to the first side of the first signal distribution structure;   a second electronic component coupled to the first side of the first signal distribution structure;   a first encapsulating material on the first side of the first signal distribution structure and around the first electronic component and the second electronic component;   a third electronic component coupled to the second side of the first signal distribution structure;   conductive pillars coupled to the second side of the first signal distribution structure and positioned laterally around the third electronic component; and   a second encapsulating material on the second side of the first signal distribution structure and around the third electronic component and the conductive pillars.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the first electronic component and the second electronic component vertically overlap the third electronic component. 
     
     
         3 . The semiconductor device of  claim 1 , wherein:
 the first electronic component comprises a first semiconductor die; and   the second electronic component comprises a second semiconductor die.   
     
     
         4 . The semiconductor device of  claim 1 , wherein the third electronic component comprises a semiconductor die. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the third electronic component comprises a passive component. 
     
     
         6 . The semiconductor device of  claim 1 , wherein the second encapsulating material laterally surrounds and contacts conductive material of each conductive pillar. 
     
     
         7 . The semiconductor device of  claim 1 , wherein:
 a first side of each conductive pillar is exposed from the second encapsulating material at a first side of the second encapsulating material; and   a second side of each conductive pillar is exposed from the second encapsulating material at a second side of the second encapsulating material that is opposite the first side of the second encapsulating material.   
     
     
         8 . The semiconductor device of  claim 1 , comprising a second signal distribution structure over the first side of the second encapsulating material, the conductive pillars, and the third electronic component. 
     
     
         9 . The semiconductor device of  claim 1 , wherein:
 the third electronic component comprises a first component side oriented toward the first signal distribution structure and a second component side oriented away from the first signal distribution structure; and   the second component side is devoid of the second encapsulating material.   
     
     
         10 . A semiconductor device comprising:
 a first signal distribution structure having a first side and a second side that is opposite the first side of the first signal distribution structure;   a first electronic component comprising a first terminal and a second terminal coupled to the first side of the first signal distribution structure;   a second electronic component comprising a first terminal and a second terminal coupled to the first side of the first signal distribution structure;   a first encapsulating material on the first side of the first signal distribution structure and around the first electronic component and the second electronic component;   a third electronic component coupled to the second side of the first signal distribution structure;   conductive pillars coupled to the second side of the first signal distribution structure and positioned laterally around the third electronic component; and   a second encapsulating material on the second side of the first signal distribution structure, and around the third electronic component and the conductive pillars;   wherein the first signal distribution structure comprises a first electrical pathway between the first terminal of the first electronic component and a first conductive pillar of the conductive pillars, and a second electrical pathway between the second terminal of the first electronic component and the third electronic component.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the first signal distribution structure comprises a third electrical pathway between the first terminal of the second electronic component and a second conductive pillar of the conductive pillars, and a fourth electrical pathway between the second terminal of the second electronic component and the third electronic component. 
     
     
         12 . The semiconductor device of  claim 10 , wherein the first electronic component and the second electronic component vertically overlap the third electronic component. 
     
     
         13 . The semiconductor device of  claim 10 , wherein:
 the first electronic component comprises a first semiconductor die; and   the second electronic component comprises a second semiconductor die.   
     
     
         14 . The semiconductor device of  claim 10 , wherein the third electronic component comprises a semiconductor die. 
     
     
         15 . The semiconductor device of  claim 10 , wherein the third electronic component comprises a passive component. 
     
     
         16 . The semiconductor device of  claim 10 , wherein the second encapsulating material laterally surrounds and contacts conductive material of each conductive pillar. 
     
     
         17 . The semiconductor device of  claim 10 , comprising:
 a conductive balls; and   wherein each conductive pillar of the conductive pillars has a conductive ball coupled to an end of the respective conductive pillar.   
     
     
         18 . The semiconductor device of  claim 10 , comprising:
 a second signal distribution structure on the second encapsulating material;   wherein the second encapsulating material, the conductive pillars, and the third electronic component are positioned between the first signal distribution structure and the second distribution structure.   
     
     
         19 . A method of forming a semiconductor device, the method comprising:
 providing a first signal distribution structure having a first side and a second side that is opposite the first side of the first signal distribution structure, wherein the first signal distribution structure comprises a dielectric layer and a conductive layer;   coupling a first electronic component to the first side of the first signal distribution structure;   coupling a second electronic component to the first side of the first signal distribution structure;   encapsulating the first side of the first signal distribution structure, the first electronic component, and the second electronic component in a first encapsulating material;   coupling a third electronic component to the second side of the first signal distribution structure;   providing conductive pillars coupled to the second side of the first signal distribution structure and positioned laterally around the third electronic component; and   encapsulating the second side of the first signal distribution structure, the third electronic component, and the conductive pillars in a second encapsulating material.   
     
     
         20 . The method of  claim 19 , wherein:
 the first electronic component comprises a first semiconductor die;   the second electronic component comprises a second semiconductor die; and   the third electronic component comprises a third semiconductor die.