SILYL PHOSPHINE COMPOUND, PROCESS FOR PRODUCING SILYL PHOSPHINE COMPOUND AND PROCESS FOR PRODUCING InP QUANTUM DOTS

Abstract

The silyl phosphine compound of the present invention is represented by the formula (1) and has an arsenic content of not more than 1 ppm. The process for producing a silyl phosphine compound of the present invention is a process comprising mixing a basic compound, a silylating agent and phosphine to obtain a solution containing a silyl phosphine compound, removing a solvent from the solution to obtain a concentrated solution of a silyl phosphine compound, and distilling the concentrated solution, wherein an arsenic content in the phosphine is adjusted to not more than 1 ppm by volume in terms of arsine. The process for producing InP quantum dots of the present invention uses, as a phosphorus source, a silyl phosphine compound represented by the formula (1) and having an arsenic content of not more than 1 ppm by mass.(For definition of R, see the specification.)

1 . A process for producing InP quantum dots by allowing a phosphorus source to react with an indium source, wherein as the phosphorus source, a silyl phosphine compound represented by the following formula (1) and having an arsenic content of not more than 1 ppm by mass is used, 
       
         
           
           
               
               
           
         
       
        wherein each R is independently an alkyl group having not less than 1 and not more than 5 carbon atoms or an aryl group having not less than 6 and not more than 10 carbon atoms. 
     
     
         2 . The process for producing InP quantum dots according to  claim 1 , wherein as the indium source, at least one selected from the group consisting of indium acetate, indium laurate, indium myristate, indium palmitate, indium stearate and indium oleate is used. 
     
     
         3 . The process for producing InP quantum dots according to  claim 1 , wherein the reaction of the phosphorus source with the indium source is carried out at a temperature of not lower than 250° C. and not higher than 350° C. 
     
     
         4 . The process for producing InP quantum dots according to  claim 1 , wherein the reaction of the phosphorus source with the indium source is carried out in an organic solvent. 
     
     
         5 . The process for producing InP quantum dots according to  claim 1 , wherein as an element M other than phosphorus and indium, at least one selected from the group consisting of Be, Mg, Zn, B, Al, Ga, S, Se and N is added to obtain composite quantum dots of In, P and M. 
     
     
         6 . A process for producing quantum dots of a core-shell structure, comprising using each of InP quantum dots obtained by the process according to  claim 1  as a core, and coating this core with a coating compound other than InP.