Microchip charge patterning

Abstract

A method of forming a charge pattern on a microchip includes depositing a first material on an insulator surface of the microchip, depositing a material having capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilanem, and patterning the self-assembled monolayer to reveal a portion of the first material. A method of forming a charge pattern in a microchip includes depositing a first material as one of either a solution processed material or a vapor deposited material to generate a first polarity or first magnitude of charge, depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge, and immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.

What is claimed is: 
     
         1 . A method of forming a charge pattern on a microchip, comprising:
 depositing a first material on an insulator surface of the microchip;   depositing a material having the capability of forming a self-assembled monolayer on the other material, wherein the material comprises at least one material selected from the group consisting of: octadecyltrichlorosilane, phenethyltrichlorosilane, hexamethyldisilazane, allyltrimethoxysilane, or perfluorooctyltrichlorosilane; and   patterning the self-assembled monolayer to reveal a portion of the first material.   
     
     
         2 . The method as claimed in  claim 1 , wherein the first material comprises an oxide. 
     
     
         3 . The method as claimed in  claim 1  wherein depositing the first material comprises: 
 first depositing an oxide on an insulator surface of the microchip; and 
 patterning a sacrificial blocking material onto a portion of the oxide as the first material; and 
 removing the sacrificial blocking material after depositing the self-assembled monolayer to reveal the oxide. 
 
     
     
         4 . The method as claimed in  claim 3 , wherein the blocking material comprises photoresist. 
     
     
         5 . The method as claimed in  claim 3 , wherein the method is performed at one of with the chiplet scale or the wafer scale. 
     
     
         6 . A method of forming a charge pattern in a microchip, comprising:
 depositing a first material as one of either a solution processed material, or a vapor deposited material to generate a first polarity or first magnitude of charge;   depositing a second material as a vapor deposited material to generate a second polarity or second magnitude of charge; and   immersing the microchip in a non-polar fluid comprising one selected from the group consisting of: an isoparafinnic liquid, a hydrocarbon liquid and dodecane.   
     
     
         7 . The method as claimed in  claim 6 , wherein depositing the first material comprises depositing a solution process material. 
     
     
         8 . The method as claimed in  claim 6 , wherein depositing the first material comprises depositing a vapor deposited material. 
     
     
         9 . The method as claimed in  claim 6 , wherein the first material comprises at least one selected from the group consisting of: polyethylene, polystyrene, polymethylmethacrylate, parylene, polyvinylalcohol, cationic and anionic polyelectrolytes, polystyrene-sulfonic acid, polyallylamine, polyacrylic acid, poly(diallyldimethylammonium chloride), organometallic salts, zinc stearate, aluminum stearate, silica oxide, alumina oxide, or titania oxide.