Led package for uv light and process

Abstract

The invention relates to an LED package for UV light comprising an optoelectronic device which, in particular as a volume emitter, is designed to emit light in the ultraviolet spectrum during operation. The component is arranged on a carrier with two contact pads for electrical contacting. Furthermore, a frame surrounding the component and arranged on the carrier is provided with a gas-impermeable outlet region lying in a main radiation direction, so that a hermetically sealed cavity comprising an inner region of the carrier is formed, the side walls of the frame facing the optoelectronic device being beveled and opening towards the main radiation direction. An ESD protection element arranged outside the inner area on the carrier is electrically connected to at least one of the two contact pads.

1 . An LED package for ultraviolet (UV) light, comprising:
 an optoelectronic device which, in particular as a volume emitter, is designed to emit light in an ultraviolet spectrum during operation;   a carrier comprising two contact pads for electrically contacting the optoelectronic device arranged on the two contact pads;   an inorganic frame arranged on the carrier and surrounding the optoelectronic device in a central region, side walls of the frame facing the optoelectronic device being beveled and opening towards a main radiation direction; and   an electrostatic discharge (ESD) protection element arranged on the carrier outside the central region on the carrier, which is electrically connected to at least one of the two contact pads;   wherein the frame comprises at least one cavity in a sidewall, in particular a cavity in each sidewall, said cavity open towards the carrier and having an opening onto an outer side wall of the inorganic frame; and   wherein the ESD protection element, in particular an ESD protection diode, is positioned in said cavity.   
     
     
         2 . The LED package according to  claim 1 , wherein the beveled side walls of the frame comprise a reflective layer, in particular made of aluminum, silver or another material with a reflectance of >80% for the light emitted by the optoelectronic device during the operation. 
     
     
         3 . The LED package according to  claim 1 , further comprising a transparent window which is fastened in its edge region to an upper side of the frame, in particular in a continuous manner. 
     
     
         4 . The LED package according to  claim 1 , wherein the carrier comprises two further contact pads on its upper side, which are each electrically connected to corresponding contact pads in an inner area and on which the ESD protection element is arranged. 
     
     
         5 . The LED package according to  claim 1 , wherein the frame is electrically isolated from contact pads on the carrier in a region of the cavity. 
     
     
         6 . The LED package according to  claim 1 , wherein the cavity of the frame is open towards the central region. 
     
     
         7 . The LED package according to  claim 1 , wherein the opening onto an outer side wall of the inorganic frame comprises a height larger than a height of the ESD protection diode and/or a length larger than a length of the ESD protection diode. 
     
     
         8 . The LED package according to  claim 1 , further comprising a socket surrounding the frame and disposed on the carrier. 
     
     
         9 . The LED package according to  claim 8 , wherein the carrier and the socket are made of a same material and where optionally the socket is gas-tightly bonded to the carrier with a metallic solder optionally comprising gold. 
     
     
         10 . The LED package according to  claim 8 , wherein the frame is spaced apart from the socket and/or a height of the frame is less than a height of the socket. 
     
     
         11 . The LED package according to  claim 8 , further comprising a window transparent to light in the ultraviolet spectrum disposed over the frame and connected to the socket, optionally in a gas-tight manner. 
     
     
         12 . A method of making a package for ultraviolet (UV) light, comprising:
 Providing a silicon substrate;   Forming a cavity in the silicon substrate, especially by anisotropic etching;   optionally Metallizing a surface of the cavity;   Attaching an auxiliary support to an upper surface of an edge region of the cavity;   Backside removing of silicon material in an area of the cavity such that a silicon frame is formed, wherein said silicon frame comprises a cavity on a back side; and   Arranging the silicon frame on a carrier in such a way that the silicon frame forms an inner region in which an optoelectronic device is arranged, wherein the cavity on the back side is located above an electrostatic discharge (ESD) protection diode on the carrier.   
     
     
         13 . The method according to  claim 12 , wherein the backside removing of the silicon material comprises:
 etching a cavity into the backside of each sidewall of the frame, in particular at a same relative position.   
     
     
         14 . The method according to  claim 12 , further comprising separating the silicon substrate along a cavity of the backside, such that the cavity comprises an opening of a sidewall of the frame, said sidewall corresponding to a separation line of the silicon substrate. 
     
     
         15 . The method according to  claim 12 , wherein providing the silicon substrate comprises:
 Providing a transparent auxiliary carrier, in particular comprising SiO 2  or Al 2 O 3 ;   optionally coating at least one side of the transparent auxiliary carrier to match a refractive index to a surrounding medium; and   Applying a metallic layer or layer sequence in a form of a circumferential frame, wherein the metallic layer or the layer sequence comprises gold.   
     
     
         16 . The method according to  claim 12 , wherein the metallizing of the surface of the cavity comprises at least one of:
 Structuring the cavity prior to metallization so that a bottom of the cavity remains free of a metallization layer;   Forming a passivation layer comprising at least one of SiO 2 , SiN, SiON, TEOS, NbO, Al 2 O 3 , TA 2 O 5 , or a combination thereof   Applying a metallic solder to a top surface of an edge portion of the cavity, the metallic solder having a layer sequence comprising gold and tin; or   Forming parting trenches along the edge region of the cavity, wherein a depth of the parting trenches substantially corresponds to a depth of the cavity.   
     
     
         17 . The method according to  claim 12 , further comprising placing the silicon frame on a support, including:
 Providing a structured carrier comprising two contact pads on one surface;   Applying an optoelectronic device to the two contact pads; and   Aligning and applying the silicon frame around the optoelectronic device to the carrier.   
     
     
         18 . The method according to  claim 12 , further comprising placing the silicon frame on a support, including:
 Providing a structured carrier comprising two contact pads on one surface;   Aligning and applying the silicon frame around the two contact pads to the carrier; and   Aligning and applying an optoelectronic device to the two contact pads.   
     
     
         19 . The method according to  claim 12 , further comprising providing a patterned substrate including patterning the substrate so as to form a metallic layer on the surface of the substrate having substantially same dimensions of the silicon frame.