Epitaxial structure and semiconductor chip applying same

Abstract

Provided are an epitaxial structure and a semiconductor chip applying same. The epitaxial structure comprises a quantum well structure, a P-type contact layer, and an electrode layer, which are stacked in sequence; the P-type contact layer comprises a first step part and a second step part that are disposed in a step shape, the second step part being closer to the quantum well structure relative to the first step part; the first step part and the second step part are filled with a first insulation part. By means of the described method, the anti-catastrophic optical mirror damage value of a semiconductor chip can be effectively improved.

What is claimed is: 
     
         1 . An epitaxial structure, comprising:
 a quantum well structure;   a P-type contact layer; and   an electrode layer,   wherein the quantum well structure, the P-type contact layer, and the electrode layer are stacked in sequence,   wherein the P-type contact layer comprises a first step part and a second step part that are disposed in a step shape, and the second step part is closer to the quantum well structure than the first step part, and   wherein each of the first step part and the second step part is filled with a first insulation part.   
     
     
         2 . The epitaxial structure according to  claim 1 , wherein a length of the first step part along a resonance cavity direction of the epitaxial structure is greater than a length of the second step part along the resonance cavity direction of the epitaxial structure. 
     
     
         3 . The epitaxial structure according to  claim 2 , wherein the length of the second step part along the resonance cavity direction of the epitaxial structure is greater than or equal to 1 um, and smaller than or equal to 30 um. 
     
     
         4 . The epitaxial structure according to  claim 1 , a height of the first step part along a stacking direction of the P-type contact layer and the electrode layer is greater than a height of the second step part along the stacking direction of the P-type contact layer and the electrode layer. 
     
     
         5 . The epitaxial structure according to  claim 4 , wherein the height of the second step part along the stacking direction of the P-type contact layer and the electrode layer is greater than or equal to 1 nm, and smaller than or equal to 100 nm. 
     
     
         6 . The epitaxial structure according to  claim 1 , wherein the electrode layer includes a third step part, the third step part and the first step part are disposed in a step shape, and the third step part is filled with a second insulation part. 
     
     
         7 . The epitaxial structure according to  claim 6 , wherein a length of the third step part along a resonance cavity direction of the epitaxial structure is greater than a length of the first step part along the resonance cavity direction of the epitaxial structure. 
     
     
         8 . The epitaxial structure according to  claim 1 , further comprising a P-type cover layer and a first waveguide layer that are provided between the P-type contact layer and the quantum well structure. 
     
     
         9 . The epitaxial structure according to  claim 8 , wherein the epitaxial structure further comprises a second waveguide layer, an N-type cover layer, and an N-type base layer that are arranged in sequence at a side of the quantum well structure away from the P-type contact layer. 
     
     
         10 . A semiconductor chip comprising a substrate and an epitaxial structure,
 wherein the substrate comprises:   a quantum well structure;   a P-type contact layer; and   an electrode layer,   wherein the quantum well structure, the P-type contact layer, and the electrode layer are stacked in sequence,   wherein the P-type contact layer comprises a first step part and a second step part that are disposed in a step shape, and the second step part is closer to the quantum well structure than the first step part,   wherein each of the first step part and the second step part is filled with a first insulation part, and   wherein the epitaxial structure is provided at the substrate.