Electronic device and production method thereof

Abstract

An electronic device and a production method thereof, wherein the electronic device includes: a semiconductor layer comprising a plurality of quantum dots; and a first electrode and a second electrode spaced apart from each other; wherein the plurality of quantum dots do not comprise cadmium, lead, or mercury; wherein the plurality of quantum dots comprise indium and optionally gallium; a Group VA element, wherein the Group VA element comprises antimony, arsenic, or a combination thereof, and a molar ratio of the Group VA element with respect to the Group IIIA metal (e.g., indium) is less than or equal to about 1.2:1, and wherein the semiconductor layer may be disposed between the first electrode and the second electrode.

1 . An electronic device comprising:
 a layer comprising a quantum dot; and   a first electrode and a second electrode spaced apart from each other;   wherein the quantum dot comprises a Group IIIA-VA compound comprising a Group IIIA metal and a Group VA element, and the quantum dot comprises a surface treated with trioctylphosphine-indium halide,   wherein the Group IIIA metal comprises indium and optionally gallium, and   the Group VA element comprises antimony, arsenic, or a combination thereof,   wherein a molar ratio of the Group VA element with respect to the Group IIIA metal is less than or equal to about 1.2:1, and   wherein the semiconductor layer comprises a face disposed in a space between the first electrode and the second electrode.   
     
     
         2 . The electronic device of  claim 1 , wherein the layer comprises an alkylammonium halide, a carboxylic acid compound comprising a thiol group, a thiocyanic acid compound, alkali metal sulfide, an alkali azide or a combination thereof, or
 wherein the molar ratio of the Group VA element with respect to the Group IIIA metal is greater than 1:1.   
     
     
         3 .- 21 . (canceled) 
     
     
         22 . A photodetector comprising:
 a semiconductor layer comprising a plurality of quantum dots; and   a first electrode and a second electrode spaced apart from each other;   wherein the plurality of quantum dots comprises a Group IIIA-VA compound comprising a Group IIIA metal and a Group VA element,   wherein the Group IIIA metal comprises indium and optionally gallium,   wherein the Group VA element comprises antimony, arsenic, or a combination thereof,   wherein a molar ratio of the Group VA element with respect to the Group IIIA metal is greater than about 1:1 and less than or equal to about 1.2:1, and   wherein the semiconductor layer comprises a face disposed in a space between the first electrode and the second electrode.   
     
     
         23 . The photodetector of  claim 22 , wherein the Group IIIA metal comprises indium and the Group VA element is antimony. 
     
     
         24 . The photodetector of  claim 22 , wherein the plurality of quantum dots InAs x Sb 1-x , In x Ga 1-x Sb, In x Ga 1-x As y Sb 1-y , or a combination thereof, wherein x is greater than 0 and less than 1 and y is greater than 0 and less than 1. 
     
     
         25 . The photodetector of  claim 22 , wherein an average size of the plurality of quantum dots is greater than 6.5 nanometers. 
     
     
         26 . The photodetector of  claim 22 , wherein the plurality of quantum dots is configured to exhibit a photoluminescent peak wavelength of greater than or equal to about 700 nanometers and less than or equal to about 1800 nanometers. 
     
     
         27 . The photodetector of  claim 22 , wherein the semiconductor layer absorbs light of a wavelength of greater than or equal to about 1000 nanometers to generate a photocurrent. 
     
     
         28 . The photodetector of  claim 22 , wherein the semiconductor layer absorbs light of a wavelength of greater than or equal to about 1400 nanometers to generate a photocurrent. 
     
     
         29 . The photodetector of  claim 22 , wherein the semiconductor layer is configured to exhibit a responsivity of greater than or equal to about 3×10 −3  amperes per watt, an external quantum efficiency of greater than or equal to about 0.2%, or both. 
     
     
         30 . The photodetector of  claim 22 , wherein the plurality of quantum dots does not comprise cadmium. 
     
     
         31 . The photodetector of  claim 22 , wherein an average size of the plurality of quantum dots is from about 9 nanometers to about 20 nanometers. 
     
     
         32 . The photodetector of  claim 22 , wherein the photodetector further comprises a third electrode facing the semiconductor layer and an insulation layer interposed between the semiconductor layer and the third electrode. 
     
     
         33 . The photodetector of  claim 22 , wherein the semiconductor layer is in contact with the first electrode and the second electrode. 
     
     
         34 . A field effect transistor comprising:
 a semiconductor layer comprising a plurality of quantum dots; and   a first electrode and a second electrode spaced apart from each other;   wherein the plurality of quantum dots comprises a Group IIIA-VA compound comprising a Group IIIA metal and a Group VA element,   wherein the Group IIIA metal comprises indium, and optionally gallium, and the Group VA element comprises antimony, arsenic, or a combination thereof,   wherein a molar ratio of the Group VA element with respect to the Group IIIA metal is less than or equal to about 1.2:1,   wherein the semiconductor layer comprises a face disposed in a space between the first electrode and the second electrode,   wherein the field effect transistor further comprises a third electrode facing the semiconductor layer and an insulation layer interposed between the semiconductor layer and the third electrode, wherein the insulation layer separates the third electrode from the first electrode, and   wherein the field effect transistor is configured to exhibit a field effect electron mobility of greater than or equal to about 0.5 cm 2 /Vs.   
     
     
         35 . The field effect transistor of  claim 34 , wherein the field effect transistor is configured to exhibit a field effect hole mobility of greater than or equal to about 2.5×10 −3  square centimeters per volt-second. 
     
     
         36 . The field effect transistor of  claim 34 , wherein the plurality of quantum dots does not comprise cadmium. 
     
     
         37 . The field effect transistor of  claim 34 , wherein the Group IIIA metal comprises indium and the Group VA element is antimony. 
     
     
         38 . The field effect transistor of  claim 34 , wherein the plurality of quantum dots InAs x Sb 1-x , In x Ga 1-x Sb, In x Ga 1-x As y Sb 1-y , or a combination thereof, wherein x is greater than 0 and less than 1 and y is greater than 0 and less than 1.