Solid-state imaging device and manufacturing method of the same, and electronic apparatus

Abstract

There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

1 . A solid-state imaging device, comprising:
 an imaging pixel including a first photoelectric conversion unit that receives incident light and a first color filter that is formed above the first photoelectric conversion unit; and   a phase difference detection pixel including a second photoelectric conversion unit which receives incident light, a second color filter and a light shielding unit that shields some of the light incident onto the second photoelectric conversion unit,   wherein the second color filter included in the phase difference detection pixel is formed so as to have a film thickness to be smaller than a film thickness of the first color filter included in the imaging pixel.   
     
     
         2 . The solid-state imaging device according to  claim 1 , wherein the second color filter included in the phase difference detection pixel is formed as a color filter with a same color as a color of the first color filter included in the imaging pixel. 
     
     
         3 . The solid-state imaging device according to  claim 2 , wherein the second color filter included in the phase difference detection pixel is formed as any one of a red color filter, a green color filter, and a blue color filter. 
     
     
         4 . The solid-state imaging device according to  claim 2 , wherein the second color filter included in the phase difference detection pixel is formed as a white color filter. 
     
     
         5 . The solid-state imaging device according to  claim 1 , wherein microlenses are provided above the first and second color filters. 
     
     
         6 . The solid-state imaging device according to  claim 5 , wherein at least one of a shape or a size of the microlenses is based on a thickness of either the first color filter or the second color filter. 
     
     
         7 . The solid-state imaging device according to  claim 1 , wherein the second color filter having a film thickness smaller than a film thickness of the first color filter is based on a smaller light exposure amount and a lower light exposure luminance as compared with the first color filter. 
     
     
         8 . A manufacturing method of a solid-state imaging device that includes an imaging pixel including a first photoelectric conversion unit that receives incident light and a first color filter that is formed above the first photoelectric conversion unit, and a phase difference detection pixel including a second photoelectric conversion unit that receives incident light, a second color filter and a light shielding unit that shields some of the light incident onto the second photoelectric conversion unit, the method comprising:
 forming the second color filter included in the phase difference detection pixel so as to have a film thickness to be smaller than a film thickness of the first color filter included in the imaging pixel.   
     
     
         9 . The manufacturing method of a solid-state imaging device according to  claim 8 , further comprising:
 exposing a color filter material with first light exposure conditions, using a first reticle having a first exposure pattern in an area in which the imaging pixel is formed; and   exposing the color filter material with second light exposure conditions, different than the first light exposure conditions, using a second reticle having a second exposure pattern in an area in which the phase difference detection pixel is formed.   
     
     
         10 . The manufacturing method of a solid-state imaging device according to  claim 9 , wherein the first and second exposure conditions at least include an exposure amount and an exposure illuminance. 
     
     
         11 . The manufacturing method of a solid-state imaging device according to  claim 9 , wherein the first exposure pattern is different than the second exposure pattern. 
     
     
         12 . The manufacturing method of a solid-state imaging device according to  claim 8 , further comprising:
 exposing a color filter material using a gray scale mask having a first exposure pattern in an area in which the imaging pixel is formed, and a second exposure pattern in an area in which the phase difference detection pixel is formed,   wherein a light transmittance of the second exposure pattern is different than a light transmittance of the first exposure pattern.   
     
     
         13 . The manufacturing method of a solid-state imaging device according to  claim 12 , wherein the light transmittance of the second exposure pattern is lower than the light transmittance of the first exposure pattern. 
     
     
         14 . An electronic apparatus, comprising:
 a solid-state imaging device including:   an imaging pixel including a first photoelectric conversion unit that receives incident light and a first color filter that is formed above the first photoelectric conversion unit; and   a phase difference detection pixel including a second photoelectric conversion unit which receives incident light, a second color filter and a light shielding unit that shields some of the light incident onto the second photoelectric conversion unit,   wherein the second color filter included in the phase difference detection pixel is formed so as to have a film thickness to be smaller than a film thickness of the first color filter included in the imaging pixel.   
     
     
         15 . The electronic apparatus according to  claim 14 , wherein the second color filter included in the phase difference detection pixel is formed as a color filter with a same color as a color of the first color filter included in the imaging pixel. 
     
     
         16 . The electronic apparatus according to  claim 15 , wherein the second color filter included in the phase difference detection pixel is formed as any one of a red color filter, a green color filter, and a blue color filter. 
     
     
         17 . The electronic apparatus according to  claim 15 , wherein the second color filter included in the phase difference detection pixel is formed as a white color filter. 
     
     
         18 . The electronic apparatus according to  claim 14 , wherein microlenses are provided above the first and second color filters. 
     
     
         19 . The electronic apparatus according to  claim 18 , wherein at least one of a shape or a size of the microlenses is based on a thickness of either the first color filter or the second color filter. 
     
     
         20 . The electronic apparatus according to  claim 14 , wherein the second color filter having a film thickness smaller than a film thickness of the first color filter is based on a smaller light exposure amount and a lower light exposure luminance as compared with the first color filter.